Related papers: A Monolithic active pixel sensor for ionizing radi…

Monolithic pixel sensors for charged particle detection and imaging applications have been designed and fabricated using commercially available, deep-submicron Silicon-On-Insulator (SOI) processes, which insulate a thin layer of integrated…

This paper presents the design and test results of a prototype monolithic pixel sensor manufactured in deep-submicron fully-depleted Silicon-On-Insulator (SOI) CMOS technology. In the SOI technology, a thin layer of integrated electronics…

In this paper, we describe the development of monolithic pixel detectors by using a Silicon-on-Insulator (SOI) technology for X-ray and charged particle applications. The detectors are based on a 0.2 {\mu}m CMOS fully depleted SOI process…

Monolithic Active Pixel Sensors (MAPS) have been developed since the late 1990s employing silicon substrate with a thin epitaxial layer in which deposited charge is collected by disordered diffusion rather than by drift in an electric…

Investigation of HV-CMOS sensors for use as a tracking detector in the ATLAS experiment at the upgraded LHC (HL-LHC) has recently been an active field of research. A potential candidate for a pixel detector built in Silicon-On-Insulator…

We have been developing the X-ray silicon-on-insulator (SOI) pixel sensor called XRPIX for future astrophysical satellites. XRPIX is a monolithic active pixel sensor consisting of a high-resistivity Si sensor, thin SiO$_2$ insulator, and…

CMOS Monolithic Active Pixel Sensors (MAPS) are proposed as a technology for various vertex detectors in nuclear and particle physics. We discuss the mechanisms of ionizing radiation damage on MAPS hosting the the dead time free, so-called…

A monolithic pixel sensor in deep-submicron Silicon-On-Insulator (SOI) CMOS technology has been designed, manufactured and characterised. This technology is of significant interest for applications in particle tracking and imaging. The…

We have been developing monolithic active pixel sensors for X-rays based on the silicon-on-insulator technology. Our device consists of a low-resistivity Si layer for readout CMOS electronics, a high-resistivity Si sensor layer, and a…

We are developing monolithic pixel sensors based on a 0.2 $\mu$m fully-depleted Silicon-on-Insulator (SOI) technology for HEP experiment applications. The total ionizing dose (TID) effect is the major issue in the applications for hard…

SOI (Silicon-On-Insulator) pixel sensor is promising technology for developing the high position resolution detector by integrating the small pixels and circuits in the monolithic way. The event driven (trigger mode) SOI based pixel sensor…

We have been developing monolithic active pixel sensors, known as Kyoto's X-ray SOIPIXs, based on the CMOS SOI (silicon-on-insulator) technology for next-generation X-ray astronomy satellites. The event trigger output function implemented…

We are developing monolithic pixel detectors based on SOI technology for high energy physics, X-ray applications and so on.To employ SOI pixel detector on such radiation environments, we have to solve effects of total ionizing dose (TID)…

We are now developing new X-ray imaging system by using Silicon-On-Insulator (SOI) Pixel Detectors. The SOI detector is a monolithic radiation imaging detector based on a 0.2um FD-SOI CMOS process. Special additional process steps are also…

High-Voltage Monolithic Active Pixel Sensors (HV-MAPS) based on the 180 nm HV-CMOS process have been proposed to realize thin, fast and highly integrated pixel sensors. The MuPix7 prototype, fabricated in the commercial AMS H18 process,…

Depleted monolithic CMOS active pixel sensors (DMAPS) have been developed in order to demonstrate their suitability as pixel detectors in the outer layers of a toroidal LHC apparatus inner tracker (ATLAS ITk) pixel detector in the…

High Voltage Monolithic Active Pixel Sensors (HV-MAPS) are based on a commercial High Voltage CMOS process and collect charge by drift inside a reversely biased diode. HV-MAPS represent a promising technology for future pixel tracking…

Monolithic active pixel sensors with depleted substrates present a promising option for pixel detectors in high-radiation environments. High-resistivity silicon substrates and high bias voltage capabilities in commercial CMOS technologies…

This paper presents the results of the characterisation of a back-illuminated pixel sensor manufactured in Silicon-On-Insulator technology on a high-resistivity substrate with soft X-rays. The sensor is thinned and a thin Phosphor layer…

Monolithic Active Pixel Sensors (MAPS) have been developed since the late 1990s based on silicon substrates with a thin epitaxial layer (thickness of 10-15 $\mu$m) in which charge is collected on an electrode, albeit by disordered and slow…