Related papers: A Monolithic active pixel sensor for ionizing radi…
Carbon ion radiotherapy is known as a less invasive cancer treatment. The radiation quality is an important parameter to evaluate the biological effect and the clinical dose from the measured physical dose. The performance of SOPHIAS…
Integrated photonic active beamforming can significantly reduce the size and cost of coherent imagers for LiDAR and medical imaging applications. In current architectures, the complexity of photonic and electronic circuitry linearly…
Integrated optical transceivers, utilizing wavelength-division-multiplexing, offer a path forward for implementation of compact, high-bandwidth and energy-efficient interconnects for future data centers. Here we report the demonstration of…
The silicon-on-insulator pixel (SOIPIX) detector is a unique monolithic-structure imaging device currently being developed by the SOIPIX group led by the High Energy Accelerator Research Organization (KEK). The detector team at KEK Photon…
The latest HV-CMOS pixel sensor developed by the former CERN-RD50-CMOS group, known as the \mpw, demonstrates competitive radiation tolerance, spatial granularity, and timing resolution -- key requirements for future high-energy physics…
The European X-ray Free Electron Laser (XFEL) will deliver 27000 fully coherent, high brilliance X-ray pulses per second each with a duration below 100 fs. This will allow the recording of diffraction patterns of single molecules and the…
Using the multi-channel Transient Current Technique the currents induced by electron-hole pairs, produced by a focussed sub-nanosecond laser of 660 nm wavelength close to the Si-SiO2 interface of p+n silicon strip sensors have been…
The design and evaluation on the NSLS-II beamline of the 3FI application specific integrated circuit (ASIC) bump-bonded to a simply, planar, two-dimensionally segmented silicon sensor is presented. The ASIC was developed for Full-Field…
High k gadolinium oxide thin layers were deposited on silicon by high-pressure sputtering (HPS). In order to optimize the properties for microelectronic applications, different deposition conditions were used. Ti (scavenger) and Pt…
- Paper withdrawn by the author - CMOS Monolithic Active Pixel Sensors for charged particle tracking are considered as technology for numerous experiments in heavy ion and particle physics. To match the requirements for those applications…
Pixel sensors based on commercial high-voltage CMOS processes are an exciting technology that is considered as an option for the outer layer of the ATLAS inner tracker upgrade at the High Luminosity LHC. Here, charged particles are detected…
A CMOS pixel sensor, named Supix-1, is developed for a pixelated silicon tracker for the Circular Electron-Positron Collider (CEPC) project. The sensor, consisted of nine sectors varying in pixel sizes, diode sizes and geometries, is…
We present a monolithic, microfabricated, metal-oxide semiconductor (MOS) sensor array in conjunction with a machine learning algorithm to determine unique fingerprints of individual gases within homogenous mixtures. The array comprises…
MALTA2 is the latest full-scale prototype of the MALTA family of Depleted Monolithic Active Pixel Sensors (DMAPS) produced in Tower Semiconductor 180 nm CMOS technology. In order to comply with the requirements of High Energy Physics (HEP)…
In this work, the radiation responses of silicon photonic passive devices built in silicon-on-insulator (SOI) technology are investigated through high energy neutron and 60Co gamma-ray irradiation. The wavelengths of both micro-ring…
The MALTA CMOS monolithic silicon pixel sensors has been developed in the Tower 180 nm CMOS imaging process. It includes an asynchronous readout scheme and complies with the ATLAS inner tracker requirements for the HL-LHC. Several 4-chip…
Space-based gamma-ray telescopes such as the Fermi Large Area Telescope have used single sided silicon strip detectors to measure the position of charged particles produced by incident gamma rays with high resolution. At energies in the…
The integration of complex oxides on silicon presents opportunities to extend and enhance silicon technology with novel electronic, magnetic, and photonic properties. Among these materials, barium titanate (BaTiO3) is a particularly strong…
Progress is reported on the development and testing of Monolithic Active Pixel Sensors (MAPS) for a Si-W ECAL for the ILC. Using laser and source setups, a first version of the sensor has been characterised through measurements of the…
This paper presents a small-area monolithic pixel detector ASIC designed in 130 nm SiGe BiCMOS technology for the upgrade of the pre-shower detector of the FASER experiment at CERN. The purpose of this prototype is to study the integration…