Related papers: A Monolithic active pixel sensor for ionizing radi…

The isolation-free operation of photonic integrated circuits enables dense integration, reducing packaging costs and complexity. Most isolator replacements require a change in the silicon-on-insulator (SOI) foundry process and suffer from…

We report a high Responsivity broad band photo-detector working in the wavelength range 400 nm to 1100 nm in a horizontal array of Si microlines (line width ~1 micron) fabricated on a Silicon-on-Insulator (SOI) wafer. The array was made…

When SOI-PMOS functions like a capacitor-less 1T-DRAM cell, it is possible for the number of electrons to be sensed at cryogenic temperatures (5K). We developed a structure that combines SOI-NMOS and SOI-PMOS with multiple gates to form a…

High resolution image sensors require electrical access to each individual pixel for signal readout. Such access is especially challenging for ultra-miniaturized pixels, for heterogeneously integrated sensing and readout layers in…

This paper presents an FeFET-based active pixel sensor that performs in-sensor multiply-and-accumulate (MAC) operations by leveraging the multi-domain polarization states of ferroelectric layers. The proposed design integrates a…

Photonic systems based on microring resonators have a fundamental constrain given by the strict relationship among free spectral range (FSR), total quality factor (QT) and resonator size, intrinsically making filter spacing, photonic…

We present a micro-mechanical terahertz (THz) detector fabricated on a silicon on insulator (SOI) substrate and operating at room-temperature. The device is based on a U-shaped cantilever of micrometric size, on top of which two aluminum…

Integrated circuits based on CMOS (complementary metal-oxide semiconductors) are at the heart of the technological revolution of the past 40 years, as these have enabled compact and low cost micro-electronic circuits and imaging systems.…

We report on a C-band double layer graphene electro-absorption modulator on a passive SOI platform showing 29GHz 3dB-bandwith and NRZ eye-diagrams extinction ratios ranging from 1.7 dB at 10 Gb/s to 1.3 dB at 50 Gb/s. Such high modulation…

This Letter introduces a Semiconductor-Under-Insulator (SUI) technology in InP for designing strip waveguides that interface InP photonic crystal membrane structures. Strip waveguides in InP-SUI are supported under an atomic layer deposited…

The solid electrolyte interphase (SEI) is detrimental for rechargeable batteries performance and lifetime. Understanding its formation requires analytical techniques that provide molecular level insight. Here dynamic nuclear polarization…

Many years of research and development of High Voltage Monolithic Active Pixel Sensors (HVMAPS) have culminated in the final design for the Mu3e pixel sensor. MuPix10 is a fully monolithic sensor with an active pixel matrix size of…

We demonstrate an on-chip Silicon-on-Insulator (SOI) axicon etched using a low resolution (200 nm feature size, 250 nm gap) deep-ultraviolet lithographic fabrication. The axicon consists of circular gratings with seven stages of 1x2…

Hydrogenated amorphous silicon (a-Si:H) has remarkable radiation resistance properties and can be deposited on a lot of different substrates. A-Si:H based particle detectors have been built since mid 1980s as planar p-i-n or Schottky diode…

Silicon photonics provides a versatile platform for large-scale integration of optical functions, but its weak intrinsic nonlinear response limits the realization of active, intensity-dependent functionalities. Hybrid integration of…

The European X-ray Free Electron Laser (XFEL) will deliver 30,000 fully coherent, high brilliance X-ray pulses per second each with a duration below 100 fs. This will allow the recording of diffraction patterns of single complex molecules…

Semiconductor pixel detectors are widely established in High Energy Physics (HEP) and Medical physics for their high spatial resolution and tracking capabilities. Research on both monolithic detectors and hybrid detectors is ongoing.…

We present a method of embedding a Monolithic Active Pixel Sensor (MAPS) into a flexible printed circuit board (FPC) and its interconnection by means of through-hole copper plating. The resulting assembly, baptised "MAPS foil", is a…

High Energy Particle Physics experiments at the LHC use hybrid silicon detectors, in both pixel and strip geometry, for their inner trackers. These detectors have proven to be very reliable and performant. Nevertheless, there is great…

A miniaturized full-frequency encoded illumination (mini-FEI) chip is presented for high-throughput super-resolution imaging using the spatial frequency shift (SFS) effect. A tunable full SFS scheme is achieved through propagating and…