Related papers: A Monolithic active pixel sensor for ionizing radi…
We develop an efficient back gate for silicon-on-insulator (SOI) devices operating at cryogenic temperatures, and measure the quadratic hyperfine Stark shift parameter of arsenic donors in isotopically purified $^{28}$Si-SOI layers using…
CMOS Monolithic Active Pixel Sensors (MAPS) were chosen as sensor technology for the vertex detectors of STAR, CBM and the upgraded ALICE-ITS. They also constitute a valuable option for tracking devices at future e+e- colliders. Those…
Recent advancements in particle physics demand pixel detectors that can withstand increased luminosity in the future collider experiments. In response, MALTA, a novel monolithic active pixel detector, has been developed with a cutting-edge…
We have been developing X-ray SOIPIXs for next-generation satellites for X-ray astronomy. Their high time resolution ($\sim10~\mu$s) and event-trigger-output function enable us to read out without pile-ups and to use anti-coincidence…
Silicon-organic hybrid (SOH) electro-optic (EO) modulators combine small footprint with low operating voltage and hence low power dissipation, thus lending themselves to on-chip integration of large-scale device arrays. Here we demonstrate…
Active Pixel Sensor (APS) technology has shown promise for next-generation vertex detectors. This paper discusses the design and testing of two generations of APS chips. Both are arrays of 128 by 128 pixels, each 20 by 20 micro-m. Each…
We have been developing monolithic active pixel sensors series, named "XRPIX," based on the silicon-on-insulator (SOI) pixel technology, for future X-ray astronomical satellites. The XRPIX series offers high coincidence time resolution…
Application of new detectors using Silicon-On-Insulator (SOI) technology has been started in the Photon Factory, KEK. This project has two purposes. The first purpose is to develop a pulse-counting-type X-ray detector which can be used in…
In view of the tracking detector application to the ATLAS High Luminosity LHC (HL-LHC) upgrade, we have developed a new generation of High Voltage CMOS (HV-CMOS) monolithic pixel-sensor prototypes featuring the AMS aH18 (180 nm) commercial…
The role of interface states and dielectric mismatch is studied in ultrathin P-doped silicon-on-insulator (SOI) films with thickness of the device layer ($H_{SOI}$) varying from 30 to 8 nm and dopant concentration ($n_{D}$) ranging from…
Imaging experiments at the European X-ray Free Electron Laser (XFEL) require silicon pixel sensors with extraordinary performance specifications: Doses of up to 1 GGy of 12 keV photons, up to 10^5 12 keV photons per pixel of 200 \mum \times…
The upgrade to the High Luminosity Large Hadron Collider will pose unprecedented challenges to the tracking systems of all experiments. Recent advancement of active pixel detectors designed in CMOS processes provide attractive alternatives…
A system-on-chip (SoC) photonic-electronic linear-algebra accelerator with the features of wavelength-division-multiplexing (WDM) based broadband photodetections and high-dimensional matrix-inversion operations fabricated in advanced…
X-ray SOI pixel sensors, "XRPIX", are being developed for the next-generation X-ray astronomical satellite, "FORCE". The XRPIX are fabricated with the SOI technology, which makes it possible to integrate a high-resistivity Si sensor and a…
The proposed Circular Electron Positron Collider (CEPC) imposes new challenges for the vertex detector in terms of high resolution, low material, fast readout and low power. The Monolithic Active Pixel Sensor (MAPS) technology has been…
Integrated mid-infrared micro-spectrometers have a great potential for applications in environmental monitoring and space exploration. Silicon-on-insulator (SOI) is a promising platform to tackle this integration challenge, due to its…
The next generation of MAPS for future tracking detectors will have to meet stringent requirements placed on them. One such detector is the ALICE ITS3 that aims to be very light at 0.07% X/X$_{0}$ per layer and have a low power consumption…
Recent progress in active-edge technology of silicon sensors enables the development of large-area tiled silicon pixel detectors with small dead space between modules by utilizing edgeless sensors. Such technology has been proven in…
We have been developing monolithic active pixel sensors, named ``XRPIX'', based on the silicon-on-insulator (SOI) pixel technology for future X-ray astronomy satellites. XRPIX has the function of event trigger and hit address outputs. This…
Strained layer superlattice (SLS) material system is a dynamic and relatively new material for infrared detection. Large format, small-pitch and low-cost focal plane arrays (FPAs) with more pixels are in demand for different applications.…