Related papers: A Monolithic active pixel sensor for ionizing radi…
To achieve the physics goals of future colliders, it is necessary to develop novel, radiation-hard silicon sensors for their tracking detectors. We target the replacement of hybrid pixel detectors with Depleted Monolithic Active Pixel…
We present the results of the characterization of silicon pixel modules employing n-in-p planar sensors with an active thickness of 150 $\mathrm{\mu}$m, produced at MPP/HLL, and 100-200 $\mathrm{\mu}$m thin active edge sensor devices,…
Hybrid pixel single-photon-counting detectors have been successfully employed and widely used in Synchrotron radiation X-ray detection. In this paper, the silicon pixel sensors for single X-ray photon detection, which operate in…
Over the past several years, the inherent scaling limitations of electron devices have fueled the exploration of high carrier mobility semiconductors as a Si replacement to further enhance the device performance. In particular, compound…
Analogue test structures were fabricated using the Tower Partners Semiconductor Co. CMOS 65 nm ISC process. The purpose was to characterise and qualify this process and to optimise the sensor for the next generation of Monolithic Active…
Chip-scale integrated light sources are a crucial component in a broad range of photonics applications. III-V semiconductor nanowire emitters have gained attention as a fascinating approach due to their superior material properties,…
The majority of silicon photonics is built on silicon-on-insulator (SOI) wafers while the majority of electronics, including CPUs and memory, are built on bulk silicon wafers, limiting broader acceptance of silicon photonics. This…
Silicon-on-chip (SOI) photonic circuit is the most promising platform for scalable quantum information technology for its low loss, small footprint, CMOS-compatible and telecom communications techniques compatible. Multiple multiplexed…
Monolithic Active Pixel Sensors (MAPS) are a promising detector candidate for the inner tracker of the Super Tau-Charm Facility (STCF). To evaluate the performance of MAPS and the MAPS-based inner tracker, a dedicated simulation workflow…
Hybrid pixel detectors have been invented for the LHC to make tracking and vertexing possible at all in LHC's radiation intense environment. The LHC pixel detectors have meanwhile very successfully fulfilled their promises and R\&D for the…
The use of the Silicon-on-Insulator (SOI) platform has been prominent for realizing CMOS-compatible, high-performance photonic integrated circuits (PICs). But in recent years, the silicon-nitride-on-silicon-dioxide (SiN-on-SiO$_2$) platform…
A second monolithic silicon pixel prototype was produced for the MONOLITH project. The ASIC contains a matrix of hexagonal pixels with 100 {\mu}m pitch, readout by a low-noise and very fast SiGe HBT frontend electronics. Wafers with 50…
The implementation of optomechanical devices in silicon-on-insulator (SOI), the canonical silicon photonics technology is seriously hampered by the strong phonon leakage into the silica under-cladding. This limitation has been partially…
Monolithic active pixel sensors (MAPS) produced in a 65 nm CMOS imaging technology are being investigated for applications in particle physics. The MAPS design has a small collection electrode characterized by an input capacitance of ~fF,…
Many modern applications like entertainment displays, data encryption, security, and virtual reality (VR) technology require asymmetric light manipulation. Symmetric spin-orbit interactions (SOI) apply a limit in achieving an asymmetrical…
Silicon photonic integration has gained great success in many application fields owing to the excellent optical device properties and complementary metal-oxide semiconductor (CMOS) compatibility. Realizing monolithic integration of III-V…
As silicon photonics transitions from research to commercial deployment, packaging solutions that efficiently couple light into highly-compact and functional sub-micron silicon waveguides are imperative but remain challenging. The 220 nm…
A novel design for a silicon-tungsten electromagnetic calorimeter is described, based on Monolithic Active Pixel Sensors (MAPS). A test sensor with a pixel size of 50x50 um2 has been fabricated in July 2007. The simulation of the physical…
Zero-index materials exhibit exotic optical properties that can be utilized for integrated-optics applications. However, practical implementation requires compatibility with complementary metallic-oxide-semiconductor (CMOS) technologies. We…
The H2M (Hybrid-to-Monolithic) is a monolithic pixel sensor manufactured in a modified \SI{65}{\nano\meter}~CMOS imaging process with a small collection electrode. Its design addresses the challenges of porting an existing hybrid pixel…