High-speed double layer graphene electro-absorption modulator on SOI waveguide
Applied Physics
2020-03-27 v1 Optics
Abstract
We report on a C-band double layer graphene electro-absorption modulator on a passive SOI platform showing 29GHz 3dB-bandwith and NRZ eye-diagrams extinction ratios ranging from 1.7 dB at 10 Gb/s to 1.3 dB at 50 Gb/s. Such high modulation speed is achieved thanks to the quality of the CVD pre-patterned single crystal growth and transfer on wafer method that permitted the integration of high-quality scalable graphene and low contact resistance. By demonstrating this high-speed CVD graphene EAM modulator integrated on Si photonics and the scalable approach, we are confident that graphene can satisfy the main requirements to be a competitive technology for photonics.
Cite
@article{arxiv.2003.11896,
title = {High-speed double layer graphene electro-absorption modulator on SOI waveguide},
author = {Marco A. Giambra and Vito Sorianello and Vaidotas Miseikis and Simone Marconi and Alberto Montanaro and Paola Galli and Sergio Pezzini and Camilla Coletti and Marco Romagnoli},
journal= {arXiv preprint arXiv:2003.11896},
year = {2020}
}