Effective electro-optical modulation with high extinction ratio by a graphene-silicon microring resonator
Abstract
Graphene opens up for novel optoelectronic applications thanks to its high carrier mobility, ultra-large absorption bandwidth, and extremely fast material response. In particular, the opportunity to control optoelectronic properties through tuning of Fermi level enables electro-optical modulation, optical-optical switching, and other optoelectronics applications. However, achieving a high modulation depth remains a challenge because of the modest graphene-light interaction in the graphene-silicon devices, typically, utilizing only a monolayer or few layers of graphene. Here, we comprehensively study the interaction between graphene and a microring resonator, and its influence on the optical modulation depth. We demonstrate graphene-silicon microring devices showing a high modulation depth of 12.5 dB with a relatively low bias voltage of 8.8 V. On-off electro-optical switching with an extinction ratio of 3.8 dB is successfully demonstrated by applying a square-waveform with a 4 V peak-to-peak voltage.
Cite
@article{arxiv.1502.00480,
title = {Effective electro-optical modulation with high extinction ratio by a graphene-silicon microring resonator},
author = {Yunhong Ding and Xiaolong Zhu and Sanshui Xiao and Hao Hu and Lars Hagedorn Frandsen and N. Asger Mortensen and Kresten Yvind},
journal= {arXiv preprint arXiv:1502.00480},
year = {2015}
}
Comments
12 pages, including 7 figures