High performance integrated graphene electro-optic modulator at cryogenic temperature
Abstract
High performance integrated electro-optic modulators operating at low temperature are critical for optical interconnects in cryogenic applications. Existing integrated modulators, however, suffer from reduced modulation efficiency or bandwidth at low temperatures because they rely on tuning mechanisms that degrade with decreasing temperature. Graphene modulators are a promising alternative, since graphene's intrinsic carrier mobility increases at low temperature. Here we demonstrate an integrated graphene-based electro-optic modulator whose 14.7 GHz bandwidth at 4.9 K exceeds the room-temperature bandwidth of 12.6 GHz. The bandwidth of the modulator is limited only by high contact resistance, and its intrinsic RC-limited bandwidth is 200 GHz at 4.9 K.
Cite
@article{arxiv.2007.00955,
title = {High performance integrated graphene electro-optic modulator at cryogenic temperature},
author = {Brian S. Lee and Bumho Kim and Alexandre P. Freitas and Aseema Mohanty and Yibo Zhu and Gaurang R. Bhatt and James Hone and Michal Lipson},
journal= {arXiv preprint arXiv:2007.00955},
year = {2020}
}
Comments
10 pages, 4 figures, Supplementary Information