A Semiconductor Under Insulator Technology in Indium Phosphide
Optics
2015-06-11 v1
Abstract
This Letter introduces a Semiconductor-Under-Insulator (SUI) technology in InP for designing strip waveguides that interface InP photonic crystal membrane structures. Strip waveguides in InP-SUI are supported under an atomic layer deposited insulator layer in contrast to strip waveguides in silicon supported on insulator. We show a substantial improvement in optical transmission when using InP-SUI strip waveguides interfaced with localized photonic crystal membrane structures when compared with extended photonic crystal waveguide membranes. Furthermore, SUI makes available various fiber-coupling techniques used in SOI, such as sub-micron coupling, for planar membrane III-V systems.
Keywords
Cite
@article{arxiv.1210.0956,
title = {A Semiconductor Under Insulator Technology in Indium Phosphide},
author = {Khaled Mnaymneh and Dan Dalacu and Simon Frédérick and Jean Lapointe and Philip J. Poole and Robin L. Williams},
journal= {arXiv preprint arXiv:1210.0956},
year = {2015}
}