Semiconductor Epitaxy in Superconducting Templates

M. F. Ritter; H. Schmid; M. Sousa; P. Staudinger; D. Z. Haxell; M. A. Mueed; B. Madon; A. Pushp; H. Riel; F. Nichele

doi:10.1021/acs.nanolett.1c03133

Semiconductor Epitaxy in Superconducting Templates

Mesoscale and Nanoscale Physics 2022-04-13 v1 Superconductivity

Authors: M. F. Ritter , H. Schmid , M. Sousa , P. Staudinger , D. Z. Haxell , M. A. Mueed , B. Madon , A. Pushp , H. Riel , F. Nichele

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Abstract

Integration of high quality semiconductor-superconductor devices into scalable and CMOS compatible architectures remains an outstanding challenge, currently hindering their practical implementation. Here, we demonstrate growth of InAs nanowires monolithically integrated on Si inside lateral cavities containing superconducting TiN elements. This technique allows growth of hybrid devices characterized by sharp semiconductor-superconductor interfaces and with alignment along arbitrary crystallographic directions. Electrical characterization at low temperature reveals proximity induced superconductivity in InAs via a transparent interface.

Keywords

silicon physics nanowire physics semiconductor nanowire growth

Cite

@article{arxiv.2108.05878,
  title  = {Semiconductor Epitaxy in Superconducting Templates},
  author = {M. F. Ritter and H. Schmid and M. Sousa and P. Staudinger and D. Z. Haxell and M. A. Mueed and B. Madon and A. Pushp and H. Riel and F. Nichele},
  journal= {arXiv preprint arXiv:2108.05878},
  year   = {2022}
}

Semiconductor Epitaxy in Superconducting Templates

Abstract

Keywords

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