We present a superconductor-semiconductor material system that is both scalable and monolithically integrated on a silicon substrate. It uses selective area growth of Al-InAs hybrid structures on a planar III-V buffer layer, grown directly on a high resistivity silicon substrate. We characterized the electrical properties of this material system at millikelvin temperatures and observed a high average field-effect mobility of μ≈3200cm2/Vs for the InAs channel, and a hard induced superconducting gap. Josephson junctions exhibited a high interface transmission, T≈0.75, gate voltage tunable switching current with a product of critical current and normal state resistance, ICRN≈83μV, and signatures of multiple Andreev reflections. These results pave the way for scalable and high coherent gate voltage tunable transmon devices and other superconductor-semiconductor hybrids fabricated directly on silicon.
@article{arxiv.2104.03621,
title = {Electrical Properties of Selective-Area-Grown Superconductor-Semiconductor Hybrid Structures on Silicon},
author = {A. Hertel and L. O. Andersen and D. M. T. van Zanten and M. Eichinger and P. Scarlino and S. Yadav and J. Karthik and S. Gronin and G. C. Gardner and M. J. Manfra and C. M. Marcus and K. D. Petersson},
journal= {arXiv preprint arXiv:2104.03621},
year = {2022}
}