High-quality free-standing InAs nanosheets are emerging layered semiconductor materials with potentials in designing planar Josephson junction devices for novel physics studies due to their unique properties including strong spin-orbit couplings, large Land\'e g-factors and the two dimensional nature. Here, we report an experimental study of proximity induced superconductivity in planar Josephson junction devices made from free-standing InAs nanosheets. The nanosheets are grown by molecular beam epitaxy and the Josephson junction devices are fabricated by directly contacting the nanosheets with superconductor Al electrodes. The fabricated devices are explored by low-temperature carrier transport measurements. The measurements show that the devices exhibit a gate-tunable supercurrent, multiple Andreev reflections, and a good quality superconductor-semiconductor interface. The superconducting characteristics of the Josephson junctions are investigated at different magnetic fields and temperatures, and are analyzed based on the Bardeen-Cooper-Schrieffer (BCS) theory. The measurements of ac Josephson effect are also conducted under microwave radiations with different radiation powers and frequencies, and integer Shapiro steps are observed. Our work demonstrates that InAs nanosheet based hybrid devices are desired systems for investigating forefront physics, such as the two-dimensional topological superconductivity.
@article{arxiv.2304.10287,
title = {Supercurrent, Multiple Andreev Reflections and Shapiro Steps in InAs Nanosheet Josephson Junctions},
author = {Shili Yan and Haitian Su and Dong Pan and Weijie Li and Zhaozheng Lyu and Mo Chen and Xingjun Wu and Li Lu and Jianhua Zhao and Ji-Yin Wang and H. Q. Xu},
journal= {arXiv preprint arXiv:2304.10287},
year = {2023}
}