Related papers: Suspended single-electron transistors: fabrication…
We perform direct thermovoltage measurements in a single-electron transistor, using on-chip local thermometers, both in the linear and non-linear regimes. Using a model which accounts for co-tunneling, we find excellent agreement with the…
New method to probe quantum dynamics of the order parameter phase of a small superconductive island is proposed. The idea is to measure Andreev subgap conductance between the island and a dirty normal-metal wire connected with the island by…
Single electron transistors (SETs) are very sensitive electrometers and they can be used in a range of applications. In this paper we give an introduction to the SET and present a full quantum mechanical calculation of how noise is…
In mesoscopic superconductor/normal-metal/superconductor (SNS) heterostructures, it is known that the resistance of the normal metal between the superconductors has a strong temperature dependence. Based on this phenomenon, we have…
An analytical expression for the supercurrent of a superconducting single-electron transistor (SSET) is derived. The derivation is based on analogy between the model Hamiltonian for E_J>E_C and a discrete, one-dimensional harmonic…
We analyze the response of a nanomechanical resonator to an external drive when it is also coupled to a single-electron transistor (SET). The interaction between the SET electrons and the mechanical resonator depends on the amplitude of the…
Self-consistent theory of electron localization in disordered systems is generalized for the case of interacting electrons. We propose and critically compare a number of possible self-consistency schemes which take into account the lowest…
We have fabricated a quantum dot single electron transistor based on an AlGaAs/GaAs heterostructure without any modulation doping. Our device is very stable from an electronic perspective, with clear Coulomb blockade oscillations, and…
We propose a semi-suspended device structure and construct nanogapped, hysteresis-free field-effect transistors (FETs), based on the van der Waals stacking technique. The structure, which features a semi-suspended channel above a…
We report on experimental results for the conductance of metallic single-electron transistors as a function of temperature, gate voltage and dimensionless conductance. In contrast to previous experiments our transistor layout allows for a…
Single particle interference lies at the heart of quantum mechanics. The archetypal double-slit experiment has been repeated with electrons in vacuum up to the more massive $C_{60}$ molecules. Mesoscopic rings threaded by a magnetic flux…
A single-electron tunneling (SET) device with a nanoscale central island that can move with respect to the bulk source- and drain electrodes allows for a nanoelectromechanical (NEM) coupling between the electrical current through the device…
Organic electrochemical transistors offer powerful functionalities for biosensors and neuroinspired electronics, with still much to understand on the time dependent behavior of this electrochemical device. Here, we report on distributed…
We have developed a fabrication process for nanoscale tunnel junctions which includes focused-ion-beam etching from different directions. By applying the process to a Nb/(Al-)Al_2O_3/Nb trilayer, we have fabricated a Nb single-electron…
We present electrical data of silicon single electron devices fabricated with CMOS techniques and protocols. The easily tuned devices show clean Coulomb diamonds at T = 30 mK and charge offset drift of 0.01 e over eight days. In addition,…
When electrons are confined to move in a plane, strange things happen. For example, under normal circumstances, they are not expected to conduct electricity at low temperatures. However, recent experiments on a dilute electron gas confined…
The controlled fabrication of actively switchable atomic-scale devices, in particular transistors, has remained elusive to date. Here we explain operation of an atomic-scale three-terminal device by a novel switching mechanism of bistable,…
We report on the realization of a single-electron source, where current is transported through a single-level quantum dot (Q), tunnel-coupled to two superconducting leads (S). When driven with an ac gate voltage, the experiment demonstrates…
We report room-temperature Coulomb blockade in a single layer graphene three-terminal single-electron transistor (SET) fabricated using feedback-controlled electroburning. The small separation between the side gate electrode and the…
We investigate a hybrid structure consisting of $20\pm4$ implanted $^{31}$P atoms close to a gate-induced silicon single electron transistor (SiSET). In this configuration, the SiSET is extremely sensitive to the charge state of the nearby…