Related papers: Suspended single-electron transistors: fabrication…
Creating a transmon qubit using semiconductor-superconductor hybrid materials not only provides electrostatic control of the qubit frequency, it also allows parts of the circuit to be electrically connected and disconnected in situ by…
We study the temperature and gate voltage dependence of the conductance of the single electron transistor focusing on highly conducting devices. Electron tunneling is treated nonperturbatively by means of path integral Monte Carlo…
This paper describes a novel integrated circuit technology to manufacture high-density thermoelectric devices on a semiconductor wafer. With no moving parts, a thermoelectric cooler operates quietly, allows cooling below ambient…
The quantum efficiency, which characterizes the quality of information gain against information loss, is an important figure of merit for any realistic quantum detectors in the gradual process of collapsing the state being measured. In this…
Low temperature electron transport measurements of single electron transistors fabricated in advanced CMOS technology with polysilicon gates not only exhibit clear Coulomb blockade behavior but also show a large number of additional…
Owing to a few unique advantages, double-dot single electron transistor has been proposed as an alternative detector for charge states. In this work, we present a further study for its signal-to-noise property, based on a full analysis of…
Existing flexible electronics are planar, nonbreathable, and easily damaged. In this work, authors introduce a new paradigm of free-form three-dimensional integrated circuits assembled on a single textile thread for ultimate flexibility.…
We present a method to measure the critical temperature of the island of a superconducting single electron transistor. The method is based on a sharp change in the slope of the zero-bias conductance as a function of temperature. We have…
We present a method for relieving aluminum 3D transmon qubits from a silicon substrate using micromachining. Our technique is a high yield, one-step deep reactive ion etch that requires no additional fabrication processes, and results in…
We present observations of background charge fluctuators near an Al-AlO_x-Al single-electron transistor on an oxidized Si substrate. The transistor design incorporates a heavily doped substrate and top gate, which allow for independent…
We have directly measured the quantum noise of a superconducting single-electron transistor (S-SET) embedded in a microwave resonator consisting of a superconducting LC tank circuit. Using an effective bath description, we find that the…
We investigate a hybrid metallic island / single dopant electron pump based on fully-depleted silicon on insulator technology. Electron transfer between the central metallic island and the leads is controlled by resonant tunneling through…
We report on fabrication of single-electron transistors using InAs nanowires with epitaxial aluminium with fixed tunnel barriers made of aluminium oxide. The devices exhibit a hard superconducting gap induced by the proximized aluminium…
We describe the optical characterisation of two silicon cold-electron bolometers each consisting of a small ($32 \times 14~\mathrm{\mu m}$) island of degenerately doped silicon with superconducting aluminium contacts. Radiation is coupled…
A single-electron trap built with two Superconductor (S) - Insulator (I) - Normal (N) metal tunnel junctions and coupled to a readout SINIS-type single-electron transistor A (SET A) was studied in a photon detection regime. As a source of…
Superconducting hot-electron bolometers are presently the best performing mixing devices for the frequency range beyond 1.2 THz, where good quality superconductor-insulator-superconductor (SIS) devices do not exist. Their physical…
We present transport measurements on a tunable three-layer graphene single electron transistor (SET). The device consists of an etched three-layer graphene flake with two narrow constrictions separating the island from source and drain…
We have analyzed the response and noise-limited sensitivity of the radio-frequency single-electron transistor (RF-SET), extending the previously developed theory to the case of arbitrary large quality factor Q of the RF-SET tank circuit. It…
We study a single electron transistor (SET) based upon a II-VI semiconductor quantum dot doped with a single Mn ion. We present evidence that this system behaves like a quantum nanomagnet whose total spin and magnetic anisotropy depend…
A thermal position sensor was fabricated and evaluated. The device consists of an array of temperature sensing elements, fabricated entirely on a plastic substrate. A novel fabrication technology was implemented which allows direct…