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We investigate theoretically a mechanically assisted Kondo effect and electric charge shuttling in nanoelectromechanical single-electron transistor (NEM-SET). It is shown that the mechanical motion of the central island (a small metallic…
The basis of synchronous manipulation of individual electrons in solid-state devices was laid by the rise of single-electronics about two decades ago. Ultra-small structures in a low temperature environment form an ideal domain of…
Electrons trapped on the surface of cryogenic substrates (liquid helium, solid neon or hydrogen) are an emerging platform for quantum information processing made attractive by the inherent purity of the electron environment, the scalability…
Organic electrochemical transistors (OECTs) based on Poly(3,4-ethylenedioxythiophene):poly(styrene sulfonic acid) (PEDOT:PSS) are a benchmark system in organic bioelectronics. In particular, the superior mechanical properties and the…
In this study, a method for fabrication of superconducting microstructures that are partially or completely isolated from the substrate has been proposed. Two configurations of suspended microbridges have been suggested, i. e., the first…
Superinductors are circuit elements characterised by an intrinsic impedance in excess of the superconducting resistance quantum ($R_\text{Q}\approx6.45~$k$\Omega$), with applications from metrology and sensing to quantum computing. However,…
We have varied the disorder in a two-dimensional electron system in silicon by applying substrate bias. When the disorder becomes sufficiently low, we observe the emergence of the metallic phase, and find evidence for a metal-insulator…
A theoretical analysis of the charge sensitivity of the RF-SET is presented. We use the ``orthodox'' approach and consider the case when the carrier frequency is much less than $I/e$ where $I$ is the typical current through RF-SET. The…
The dielectric engineered tunnel field-effect transistor (DE-TFET) as a high performance steep transistor is proposed. In this device, a combination of high-k and low-k dielectrics results in a high electric field at the tunnel junction. As…
We report on measurements on a sample consisting of two nominally identical single-electron transistors the islands of which are coupled capacitively. One transistor at a time is operated as electron box. The remaining transistor is used as…
The development of a materials platform that exhibits both superconducting and semiconducting properties is an important endeavour for a range of emerging quantum technologies. We investigate the formation of superconductivity in nanowires…
We report on the electric measurements of an individual Au nanoparticle with an ultra-high contact resistance of about $10^{19} \Omega$. The high-impedance measurements have been carried out by counting the electrons that are transferred…
We describe a planar silicon metal-oxide-semiconductor (MOS) based single hole transistor, which is compatible with conventional Si CMOS fabrication. A multi-layer gate design gives independent control of the carrier density in the dot and…
The unique properties and atomic thickness of two-dimensional (2D) materials enable smaller and better nanoelectromechanical sensors with novel functionalities. During the last decade, many studies have successfully shown the feasibility of…
Shear horizontal surface acoustic wave (SH-SAW) sensors are considered as a viable option for label-free, sensitive, real-time, and cost-effective detection. In this paper, we present the design, the fabrication and the characterization of…
Experiments with electron or ion matter waves require a coherent, monochromatic and long-term stable source with high brightness. These requirements are best fulfilled by single atom tip (SAT) field emitters. The performance of an iridium…
Electrostatically Formed Nanowire (EFN) based transistors have been suggested in the past as gas sensing devices. These transistors are multiple gate transistors in which the source to drain conduction path is determined by the bias applied…
The paper considers the possibility of superconductivity setting in when the distance a_B between molecules (atoms) is such that a_F < a_B < a_W, where a_F and a_W are the equilibrium separations in Fermi metals and van der Waals…
Pumping characteristics were studied of the hybrid normal-metal/superconductor single-electron transistor embedded in a high-ohmic environment. Two 3 micrometer-long microstrip resistors of CrOx with a sum resistance R=80kOhm were placed…
Single electron transistors (SETs) made from single wall carbon nanotubes (SWCNTs) are promising for quantum electronic devices operating with ultra-low power consumption and allow fundamental studies of electron transport. We report on…