Circuit with small-capacitance high-quality Nb Josephson junctions

Michio Watanabe; Yasunobu Nakamura; Jaw-Shen Tsai

doi:10.1063/1.1640798

Circuit with small-capacitance high-quality Nb Josephson junctions

Mesoscale and Nanoscale Physics 2007-05-23 v2 Materials Science

Authors: Michio Watanabe , Yasunobu Nakamura , Jaw-Shen Tsai

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Abstract

We have developed a fabrication process for nanoscale tunnel junctions which includes focused-ion-beam etching from different directions. By applying the process to a Nb/(Al-)Al_2O_3/Nb trilayer, we have fabricated a Nb single-electron transistor (SET), and characterized the SET at low temperatures, T=0.04-40 K. The superconducting gap energy and the transition temperature of the Nb SET agree with the bulk values, which suggests high quality Nb junctions. The single-electron charging energy of the SET is estimated to be larger than 1 K.

Keywords

superconducting tunnel junctions field-effect transistors

Cite

@article{arxiv.cond-mat/0311332,
  title  = {Circuit with small-capacitance high-quality Nb Josephson junctions},
  author = {Michio Watanabe and Yasunobu Nakamura and Jaw-Shen Tsai},
  journal= {arXiv preprint arXiv:cond-mat/0311332},
  year   = {2007}
}

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