Related papers: Circuit with small-capacitance high-quality Nb Jos…
Josephson junction transistors and 50-junction arrays with linear junction dimensions from 200 nm down to 70 nm were fabricated from standard Nb/AlOx/Nb trilayers. The fabrication process includes electron beam lithography, dry etching,…
Josephson tunnel junctions form the basis for various superconducting electronic devices. For this reason, enormous efforts are routinely taken to establish and later on maintain a scalable and reproducible wafer-scale manufacturing process…
We report the realization of multilayer three-dimensional nanobridge Josephson junctions based on Nb/NbN and Nb/TiN superconducting stacks fabricated using electron-beam lithography and chlorine-based dry etching. In this architecture, a…
We have developed a novel fabrication process for ultra-small, full-epitaxial NbN Josephson junctions on a silicon (Si) substrate. A full-epitaxial NbN/AlN/NbN tri-layer was grown on a Si (100) wafer with a (200)-oriented TiN buffer layer.…
We report on the fabrication and electrical transport properties of superconducting junctions made of \beta-Ag$_{2}$Se topological insulator (TI) nanowires in contact with Al superconducting electrodes. The temperature dependence of the…
We have developed a technique to fabricate sub-micron, 0.6 um x 0.6 um Al-AlOx-Nb tunnel junctions using a standard e-beam resist, angle evaporation and double oxidation of the tunneling barrier, resulting in high quality niobium, as…
We have successfully fabricated Cu/AlOx-Al/Nb normal-metal/insulator/superconductor tunnel junction devices with a high value of the superconducting gap (up to $\sim 1$ mV), using electron-beam lithography and angle evaporation techniques…
The most developed integrated receivers for THz radiation nowadays are based on Josephson junction SIS devices. In this kind of devices, the highest receivable frequency is determined by the energy gap of the superconducting electrodes and…
Niobium offers the benefit of increased operating temperatures and frequencies for Josephson junctions, which are the core component of superconducting devices. However existing niobium processes are limited by more complicated fabrication…
We present a fabrication scheme and testing results for epitaxial sub-micrometer Josephson junctions. The junctions are made using a high-temperature (1170 K) "via process" yielding junctions as small as 0.8 mu m in diameter by use of…
Since the discovery of the unconventional copper-oxide high-transition-temperature superconductors (HTS), researchers have explored many methods to fabricate superconducting tunnel junctions from these materials for both superconducting…
Deep submicron Al-AlOx-Nb tunnel junctions and single electron transistors with niobium islands were fabricated by electron beam gun shadow evaporation. Using stencil masks consisting of the thermostable polymer polyethersulfone (PES) and…
We have successfully fabricated micron-scale Cu-AlO$_{x} $-Al-NbN normal metal-insulator-superconductor (NIS) tunnel junction devices, using pulsed laser deposition (PLD) for NbN film growth, and electron-beam lithography and shadow…
The Josephson junction (JJ) is the corner stone of superconducting electronics and quantum information processing. While the technology for fabricating low $T_{c}$ JJ is mature and delivers quantum circuits able to reach the "quantum…
To increase integration scale of superconductor electronics, we are developing a new, SFQ7ee, node of the fabrication process at MIT Lincoln Laboratory. In comparison to the existing SFQ5ee node, we increased the number of fully planarized…
We report a Nb/Al-AlN /Nb superconducting tunnel junction process in which the AlN barrier is formed by plasma nitridation using a compact microwave electron-cyclotron-resonance (ECR) nitrogen plasma source integrated into a standard…
We have demonstrated a novel type of superconducting transmon qubit in which a Josephson junction has been engineered to act as its own parallel shunt capacitor. This merged-element transmon (MET) potentially offers a smaller footprint and…
Single electron transistors (SETs) are fabricated by placing single walled carbon nanotubes (SWNTs) on a 100 nm wide local Al/Al2O3 bottom gate and then contacting with Pd electrodes. Coulomb oscillations up to 125 K were observed and…
In this work, we briefly overview various options for Josephson junctions which should be scalable down to nanometer range for utilization in nanoscale digital superconducting technology. Such junctions should possess high values of…
We report on the first realization of Nb-based \textit{all-metallic} gated Dayem nano-bridge field-effect transistors (Nb-FETs). These Josephson devices operate up to a temperature of $\sim 3$ K, and exhibit full suppression of the…