We report room-temperature Coulomb blockade in a single layer graphene three-terminal single-electron transistor (SET) fabricated using feedback-controlled electroburning. The small separation between the side gate electrode and the graphene quantum dot results in a gate coupling up to 3 times larger compared to the value found for the back gate electrode. This allows for an effective tuning between the conductive and Coulomb blocked state using a small side gate voltage of about 1V. The technique can potentially be used in the future to fabricate all-graphene based room temperature single-electron transistors or three terminal single molecule transistors with enhanced gate coupling.
@article{arxiv.1509.06545,
title = {Three-terminal graphene single-electron transistor fabricated using feedback-controlled electroburning},
author = {Paweł Puczkarski and Pascal Gehring and Chit S. Lau and Junjie Liu and Arzhang Ardavan and Jamie H. Warner and G. Andrew D. Briggs and Jan A. Mol},
journal= {arXiv preprint arXiv:1509.06545},
year = {2015}
}