Independently switchable atomic quantum transistors by reversible contact reconstruction
Abstract
The controlled fabrication of actively switchable atomic-scale devices, in particular transistors, has remained elusive to date. Here we explain operation of an atomic-scale three-terminal device by a novel switching mechanism of bistable, self-stabilizing reconstruction of the electrode contacts at the atomic level: While the device is manufactured by electrochemical deposition, it operates entirely on the basis of mechanical effects of the solid-liquid interface. We analyze mechanically and thermally stable metallic junctions with a predefined quantized conductance of 1-5 G_0 in experiment and atomistic simulation. Atomistic modeling of structural and conductance properties elucidates bistable electrode reconstruction as the underlying mechanism of the device. Independent room-temperature operation of two transistors at low voltage demonstrates intriguing perspectives for quantum electronics and logics on the atomic scale.
Cite
@article{arxiv.0904.0904,
title = {Independently switchable atomic quantum transistors by reversible contact reconstruction},
author = {F. -Q. Xie and R. Maul and A. Augenstein and Ch. Obermair and E. B. Starikov and G. Schoen and Th. Schimmel and W. Wenzel},
journal= {arXiv preprint arXiv:0904.0904},
year = {2009}
}