相关论文: Modeling Single Electron Transfer in Si:P Double Q…

We present a theoretical and experimental study of photonic and electronic transport properties of a voltage biased InAs semiconductor double quantum dot (DQD) that is dipole-coupled to a superconducting transmission line resonator. We…

Electron spins in semiconductor devices are highly promising building blocks for quantum processors (QPs). Commercial semiconductor foundries can create QPs using the same processes employed for conventional chips, once the QP design is…

We report on dual-gate reflectometry in a metal-oxide-semiconductor double-gate silicon transistor operating at low temperature as a double quantum dot device. The reflectometry setup consists of two radio-frequency resonators respectively…

Gate-defined quantum dots define an attractive platform for quantum computation and have been used to confine individual charges in a planar array. Here, we demonstrate control over vertical double quantum dots confined in a double quantum…

Solid-state qubits integrated on semiconductor substrates currently require at least one wire from every qubit to the control electronics, leading to a so-called wiring bottleneck for scaling. Demultiplexing via on-chip circuitry offers an…

We theoretically study single and two-qubit dynamics in the circuit QED architecture. We focus on the current experimental design [Wallraff et al., Nature 431, 162 (2004); Schuster et al., Nature 445, 515 (2007)] in which superconducting…

We studied the dynamics of a pair of single-electron double quantum dots (DQD) under longitudinal and transverse static magnetic fields and time-dependent harmonic modulation of their interaction couplings. We propose to modulate the tunnel…

Dielectric constant and absorption measurements on boron doped silicon samples show that transitions between the acceptor energy levels can be induced by an applied resonant ac electric field and the Stark tuning of level spacing with an…

I show that the quantum critical points observed in heavy fermions (the `Kondo breakdown') and in doped cuprates can be understood in terms of concealed Mott criticality. In this picture, one species of electrons undergoes a Mott…

We report a nanofabrication, control and measurement scheme for charge-based silicon quantum computing which utilises a new technique of controlled single ion implantation. Each qubit consists of two phosphorus dopant atoms ~50 nm apart,…

Quantum information technologies hold immense promise, with quantum computers poised to revolutionize problem-solving capabilities. Among the leading contenders are solid-state spin-qubits, particularly those utilizing the spin of…

We study the effect of mesoscopic fluctuations on the magnitude of errors that can occur in exchange operations on quantum dot spin-qubits. Mid-size double quantum dots, with an odd number of electrons in the range of a few tens in each…

InAs/GaAs quantum dots (QDs) and quantum dot molecules (QDMs) are self-assembled semiconductor nanostructures that can trap a single electron or hole with well-defined spin projections. QDs and QDMs have excellent optical properties and…

The small footprint of semiconductor qubits is favourable for scalable quantum computing. However, their size also makes them sensitive to their local environment and variations in gate structure. Currently, each device requires tailored…

We characterize the quantum entanglement of the realistic two-qubit signals that are sensitive to charge noises. Our working example is the time response generated from a silicon double quantum dot (DQD) platform, where a single-qubit…

Electrical transport in double quantum dots (DQDs) illuminates many interesting features of the dots' carrier states. Recent advances in silicon quantum information technologies have renewed interest in the valley states of electrons…

We report on the realization of a few-electron double quantum dot defined in a two-dimensional electron gas by means of surface gates on top of a GaAs/AlGaAs heterostructure. Two quantum point contacts (QPCs) are placed in the vicinity of…

Through the introduction of a new electron spin transport mechanism, a 2D donor electron spin quantum computer architecture is proposed. This design addresses major technical issues in the original Kane design, including spatial…

For a quantum dot (QD) in the intermediate regime between integrable and fully chaotic, the widths of single-particle levels naturally differ by orders of magnitude. In particular, the width of one strongly coupled level may be larger than…

An architecture for a quantum computer is presented in which spins associated with donors in silicon function as qubits. Quantum operations on the spins are performed using a combination of voltages applied to gates adjacent to the spins…