相关论文: Modeling Single Electron Transfer in Si:P Double Q…

Advanced hydrogen lithography techniques and low-temperature epitaxial overgrowth enable patterning of highly phosphorus-doped silicon (Si:P) monolayers (ML) with atomic precision. This approach to device fabrication has made Si:P monolayer…

We show that two electrons confined in a square semiconductor quantum dot have two isolated low-lying energy eigenstates, which have the potential to form the basis of scalable computing elements (qubits). Initialisation, one-qubit and…

We introduce a new scalable cavity quantum electrodynamics platform which can be used for quantum computing. This system is composed of coupled photonic crystal (PC) cavities which their modes lie on a Dirac cone in the whole super crystal…

We analyzed theoretically localized charge relaxation in a double quantum dot (QD) system coupled with continuous spectrum states in the presence of localized electrons Coulomb interaction in a single QD. We have found that for a wide range…

Via projection operator technology, we restrict our discussion of Double Quantum Dots system in subspaces of fixed electron population. When an incident electron tries to pass through the dots, we find transmission peaks occur, if the…

In the design of quantum computer architectures that take advantage of the long coherence times of dopant nuclear and electron spins in the solid-state, single-spin detection for readout remains a crucial unsolved problem. Schemes based on…

High-density structures of sub-surface phosphorus dopants in silicon continue to garner interest as a silicon-based quantum computer platform, however, a much-needed confirmation of their dopant arrangement has been lacking. In this work,…

Substitutional donor atoms in silicon are promising qubits for quantum computation with extremely long relaxation and dephasing times demonstrated. One of the critical challenges of scaling these systems is determining inter-donor distances…

We present transport measurements through an electrostatically defined bilayer graphene double quantum dot in the single electron regime. With the help of a back gate, two split gates and two finger gates we are able to control the number…

Upon photo- or electrical-excitation, colloidal quantum dots (QDs) are often found in multi-carrier states due to multi-photon absorption and photo-charging of the QDs. While many of these multi-carrier states are observed in single-dot…

In quantum metrology, semiconductor single-electron pumps are used to generate accurate electric currents with the ultimate goal of implementing the emerging quantum standard of the ampere. Pumps based on electrostatically defined tunable…

Solid state quantum computing proposals rely on adiabatic operations of the exchange gate among localized spins in nanostructures. We study corrections to the Heisenberg interaction between lateral semiconductor quantum dots in an external…

We develop quantum dots in a single layered MOS structure using an undoped Si/SiGe wafer. By applying a positive bias on the surface gates, electrons are accumulated in the Si channel. Clear Coulomb diamond and double dot charge stability…

We propose a novel scheme of solid state realization of a quantum computer based on single spin "enhancement mode" quantum dots as building blocks. In the enhancement quantum dots, just one electron can be brought into initially empty dot,…

We present a simple extension of the semi-classical model for a two-level system in a cavity, in order to incorporate multiple polarized transitions, such as those appearing in neutral and charged quantum dots (QDs), and two nondegenerate…

Properties of quantum dot based spin qubits have significant inter-device variability due to unavoidable presence of various types of disorder in semiconductor nanostructures. A significant source of this variability is charge disorder at…

Scalable quantum processors require high-fidelity universal quantum logic operations in a manufacturable physical platform. Donors in silicon provide atomic size, excellent quantum coherence and compatibility with standard semiconductor…

A dipolar gate alternative to the exchange gate based Kane quantum computer is proposed where the qubits are electron spins of shallow group V donors in silicon. Residual exchange coupling is treated as gate error amenable to quantum error…

We present atomistic simulations of the D0 to D- charging energies of a gated donor in silicon as a function of applied fields and donor depths and find good agreement with experimental measure- ments. A self-consistent field large-scale…

Achieving controllable coupling of dopants in silicon is crucial for operating donor-based qubit devices, but it is difficult because of the small size of donor-bound electron wavefunctions. Here we report the characterization of a quantum…