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Tunneling of single electrons has been thoroughly studied both theoretically and experimentally during last ten years. By the present time the basic physics is well understood, and creation of useful single-electron devices becomes the…

凝聚态物理 · 物理学 2007-05-23 Alexander N. Korotkov

A simple and highly reproducible single electron transistor (SET) has been fabricated using gated silicon nanowires. The structure is a metal-oxide-semiconductor field-effect transistor made on silicon-on-insulator thin films. The channel…

介观与纳米尺度物理 · 物理学 2009-11-11 M. Hofheinz , X. Jehl , M. Sanquer , G. Molas , M. Vinet , S. Deleonibus

Single electron transistors (SETs) are fabricated by placing single walled carbon nanotubes (SWNTs) on a 100 nm wide local Al/Al2O3 bottom gate and then contacting with Pd electrodes. Coulomb oscillations up to 125 K were observed and…

介观与纳米尺度物理 · 物理学 2009-11-13 Paul Stokes , Saiful I. Khondaker

Single Electron Transistors (SETs) are nanoscale electrometers of unprecedented sensitivity, and as such have been proposed as read-out devices in a number of quantum computer architectures. We show that the functionality of a standard SET…

介观与纳米尺度物理 · 物理学 2007-08-01 Vincent I. Conrad , Andrew D. Greentree , Lloyd C. L. Hollenberg

The combination of self-assembly and electronic properties as well as its true nanoscale dimensions make DNA a promising candidate for a building block of single molecule electronics. We argue that the intrinsic double helix conformation of…

材料科学 · 物理学 2007-05-23 A. V. Malyshev

Single electron transistors (SETs) made from single wall carbon nanotubes (SWCNTs) are promising for quantum electronic devices operating with ultra-low power consumption and allow fundamental studies of electron transport. We report on…

介观与纳米尺度物理 · 物理学 2017-05-09 Nan Ai , Onejae Sul , Milan Begliarbekov , Qiang Song , Kitu Kumar , Daniel S. Choi , Eui-Hyeok Yang , Stefan Strauf

Single electron transistor (SET) is an advanced tool to exploit in quantum devices. Working of such devices at room-temperature is essential for practical utilization. Dopant based single-electron devices are well studied at low-temperature…

介观与纳米尺度物理 · 物理学 2023-03-08 Pooja Yadav , Hemant Arora , Arup Samanta

Single dopants in semiconductor nanostructures have been studied in great details recently as they are good candidates for quantum bits, provided they are coupled to a detector. Here we report coupling of a single As donor atom to a…

介观与纳米尺度物理 · 物理学 2015-05-20 V. N. Golovach , X. Jehl , M. Houzet , M. Pierre , B. Roche , M. Sanquer , L. I. Glazman

We demonstrate the effect of single-electron tunneling (SET) through a carbon nanotube quantum dot on its nanomechanical motion. We find that the frequency response and the dissipation of the nanoelectromechanical system (NEMS) to SET…

介观与纳米尺度物理 · 物理学 2012-05-10 Marc Ganzhorn , Wolfgang Wernsdorfer

Molecular electronics and other technologies whose components comprise individual molecules have been pursued for half a century because the molecular scale represents the limit of miniaturisation of objects whose structure is tuneable for…

We describe critical processing issues in our development of single atom devices for solid-state quantum information processing. Integration of single 31P atoms with control gates and single electron transistor (SET) readout structures is…

凝聚态物理 · 物理学 2010-06-04 S. -J. Park , A. Persaud , J. A. Liddle , J. Nilsson , J. Bokor , D. H. Schneider , I. Rangelow , T. Schenkel

The quantum conductance of the single-electron tunneling (SET) transistor is investigated in this paper by the functional integral approach. The formalism is valid for arbitrary tunnel resistance of the junctions forming the SET transistor…

介观与纳米尺度物理 · 物理学 2009-10-31 Xiaohui Wang

Quantum confined devices of three-dimensional topological insulators have been proposed to be promising and of great importance for studies of confined topological states and for applications in low energy-dissipative spintronics and…

介观与纳米尺度物理 · 物理学 2019-09-09 Yumei Jing , Shaoyun Huang , Jinxiong Wu , Mengmeng Meng , Xiaobo Li , Yu Zhou , Hailin Peng , H. Q. Xu

Calculations of quantum transport in a carbon nanotube transistor show that such a device offers unique functionality. It can operate as a ballistic field-effect transistor, with excellent characteristics even when scaled to 10 nm…

凝聚态物理 · 物理学 2009-11-07 F. Leonard , J. Tersoff

By first lithographically fabricating contact electrodes and then as last step growing carbon nanotubes with chemical vapour deposition across the ready-made chip, many potential contamination mechanisms for nanotube devices can be avoided.…

介观与纳米尺度物理 · 物理学 2011-10-26 A. K. Huettel , H. B. Meerwaldt , G. A. Steele , M. Poot , B. Witkamp , L. P. Kouwenhoven , H. S. J. van der Zant

We study a single electron transistor (SET) based upon a II-VI semiconductor quantum dot doped with a single Mn ion. We present evidence that this system behaves like a quantum nanomagnet whose total spin and magnetic anisotropy depend…

介观与纳米尺度物理 · 物理学 2007-05-23 J. Fernandez-Rossier , R. Aguado

Realizing a quantum transistor built of molecules or quantum dots has been one of the most ambitious challenges in nanotechnology. Even though remarkable progress has been made, being able to gate and control nanometer scale objects, as…

介观与纳米尺度物理 · 物理学 2012-11-06 Carlos A. Busser , Adrian E. Feiguin

We demonstrate the fabrication of a single electron transistor device based on a single ultra-small silicon quantum dot connected to a gold break junction with a nanometer scale separation. The gold break junction is created through a…

介观与纳米尺度物理 · 物理学 2018-04-04 Zhanbin Bai , Xiangkai Liu , Zhen Lian , Kangkang Zhang , Guanghou Wang , Su-Fei Shi , Xiaodong Pi , Fengqi Song

Functionalization of nanoparticles or colloids is increasingly being used to develop customizable "atoms". Functionalization by attaching single strands of DNA allows for direct control of the binding between nanoparticles, since…

软凝聚态物质 · 物理学 2019-10-24 Chia Wei Hsu , Julio Largo , Francesco Sciortino , Francis W. Starr

A single-electron tunneling (SET) device with a nanoscale central island that can move with respect to the bulk source- and drain electrodes allows for a nanoelectromechanical (NEM) coupling between the electrical current through the device…

介观与纳米尺度物理 · 物理学 2013-04-29 R. I. Shekhter , L. Y. Gorelik , I. V. Krive , M. N. Kiselev , A. V. Parafilo , M. Jonson
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