相关论文: New universality class for step bunching in the "C…

By taking account of the alternation of structural parameters, we study bunching of impermeable steps induced by drift of adatoms on a vicinal face of Si(001). With the alternation of diffusion coefficient, the step bunching occurs…

Epitaxial growth on a surface vicinal to a high-symmetry crystallographic plane occurs through the propagation of atomic steps, a process called step-flow growth. In some instances, the steps tend to form close groups (or bunches), a…

Codeposition of impurities during the growth of a vicinal surface leads to an impurity concentration gradient on the terraces, which induces corresponding gradients in the mobility and the chemical potential of the adatoms. Here it is shown…

We model an apparent instability seen in recent experiments on current induced step bunching on Si(111) surfaces using a generalized 2D BCF model, where adatoms have a diffusion bias parallel to the step edges and there is an attachment…

We report numerical results for two models of vicinal motion. The first, LW, aims at crystal evaporation when the detachment from steps is slow [Liu and Weeks, PRB 57, 23 (1998) 14891]. The source of destabilization is electromigration…

The quasistatic approximation is a useful but questionable simplification for analyzing step instabilities during the growth/evaporation of vicinal surfaces. Using this approximation, we characterized in Part I of this work the effect on…

We use kinetic Monte Carlo simulations to understand growth- and etching-induced step bunching of 6H-SiC{0001} vicinal surfaces oriented towards [1-100] and [11-20]. By taking account of the different rates of surface diffusion on three…

Universality has been a key concept for the classification of equilibrium critical phenomena, allowing associations among different physical processes and models. When dealing with non-equilibrium problems, however, the distinction in…

We establish new scaling properties for the universality class of Model C, which describes relaxational critical dynamics of a nonconserved order parameter coupled to a conserved scalar density. We find an anomalous diffusion phase, which…

By carrying out Monte Carlo simulations,we study step bunching during solution growth. For simplicity, we consider a square lattice, which represents a diffusion field in a solution, and express the diffusion of atoms as the hopping of…

Bunching and meandering instability of steps at the 4H-SiC(0001) surface is studied by the kinetic Monte Carlo simulation method. Change in the character of step instability is analyzed for different rates of particle jumps towards step. In…

Electromigration-induced step bunching in the presence of sublimation or deposition is studied theoretically in the attachment-limited regime. We predict a phase transition as a function of the relative strength of kinetic asymmetry and…

We review the studies on the scaling of the minimal step-step distance lmin in the bunch with the bunch size N, l_min~N^(-{\gamma}). We build our retrospective around the different values of the exponent {\gamma} obtained from models and…

We use a one-dimensional step model to study quantitatively the growth of step bunches on Si(111) surfaces induced by a direct heating current. Parameters in the model are fixed from experimental measurements near 900 deg C under the…

We studied the step dynamics during crystal sublimation and growth in the limit of fast surface diffusion and slow kinetics of atom attachment-detachment at the steps. For this limit we formulate a model free of the quasi-static…

The decay of a crystalline cone below the roughening transition is studied. We consider local mass transport through surface diffusion, focusing on the two cases of diffusion limited and attachment-detachment limited step kinetics. In both…

Stepped GaN(0001) surface is studied by the kinetic Monte Carlo method and compared with the model based on Burton-Carbera-Frank equations. Successive stages of surface pattern evolution during high temperature sublimation process are…

The distinction between absolute and convective instabilities is well known in the context of hydrodynamics and plasma physics. In this Letter, we examine an epitaxial crystal growth model from this point of view and show that a…

The step bunching instability is studied in three models of step motion defined in terms of ordinary differential equations (ODE). The source of instability in these models is step-step attraction, it is opposed by step-step repulsion and…

We study current-induced step bunching and wandering instabilities with subsequent pattern formations on vicinal surfaces. A novel two-region diffusion model is developed, where we assume that there are different diffusion rates on terraces…