相关论文: Optical modulation at around 1550 nm in a InGaAlAs…
We study the linear optical absorption of bulk semiconductors in the presence of a homogeneous constant (dc) electric field with an approach suitable for including excitonic effects while working with many-band models. The absorption…
We report a persistent increase or decrease in the two-dimensional electron density of AlAs or GaAs quantum wells flanked by AlGaAs barriers, brought about by illuminating the samples at T ~ 4 K while simultaneously applying a voltage bias…
In this article, we report the first observation of nanosecond laser induced transient dual absorption bands, one in the bandgap (TA1) and another in the sub-bandgap (TA2) regions of a-Ge5As30Se65 thin films. Strikingly, these bands are…
We show a large enhancement of two-photon absorption processes in nanocrystal quantum dots and of light upconversion efficiency from the IR to the near-IR spectral regime, using a hybrid optical device in which near-IR emitting InAs quantum…
The sensitivity of 2nd and 3rd generations of interferometric gravitational wave detectors will be limited by thermal noise of the test-mass mirrors and highly reflective coatings. Recently developed crystalline coatings show a promising…
Terahertz bands enable ultra-broadband wireless communications but require compact, low-cost, and efficient transceiver modules. Conventional implementations based on metallic waveguides or silicon lenses suffer from high loss, bulkiness,…
To translate electrical into optical signals one uses the modulation of either the refractive index or the absorbance of a material by an electric field. Contemporary electroabsorption modulators (EAMs) employ the quantum confined Stark…
We show that the rate at which light tunnels between neighboring multimode waveguides can be drastically increased or reduced by the presence of small longitudinal periodic modulations of the waveguide properties that stimulate resonant…
The interaction between off-resonant laser pulses and excitons in monolayer transition metal dichalcogenides is attracting increasing interest as a route for the valley-selective coherent control of the exciton properties. Here, we extend…
We show that electron-hole correlation can be used to tune interband and intraband optical transition rates in semiconductor nanostructures with at least one weakly confined direction. The valence-to-conduction band transition rate can be…
The GaAs-based material system is well-known for the implementation of InAs quantum dots (QDs) with outstanding optical properties. However, these dots typically emit at a wavelength of around 900nm. The insertion of a metamorphic buffer…
By combining band gap engineering with the self-organized growth of quantum dots, we present a scheme of adjusting the mid-infrared absorption properties to desired energy transitions in quantum dot based photodetectors. Embedding the self…
We identify chiral inversion points in slow-light, glide-plane-symmetric, photonic-crystal waveguides, defined as fixed locations where the local optical chirality changes sign over a narrow wavelength range. We experimentally access this…
We study specific features of resonant mode conversion in nonlinear waveguides stimulated by the bi-harmonic longitudinal modulation of its parameters, which includes changes of the waveguide depth as well as its bending (in the…
We report on linewidth analysis of optical transitions in InAs/GaAs coupled quantum dots as a function of bias voltage, temperature, and tunnel coupling strength. A significant line broadening up to 100 $\mu$eV is observed at hole tunneling…
Using a mid-infrared quantum cascade laser and wavelength modulation absorption spectroscopy, we measure the frequencies of ro-vibrational transitions of N$_2$O in the 17 $\mu$m region with uncertainties below 5 MHz. These lines,…
Recent experiments showed that unity-order index change in a transparent conducting oxide (TCO) can be achieved in a metal-oxide-semiconductor (MOS) structure by accumulation charge. However, the ultrathin (~5nm) accumulation layer and…
A detailed theoretical study of the optical absorption in self-assembled quantum dots is presented in this paper. A rigorous atomistic strain model as well as a sophisticated electronic band structure model are used to ensure accurate…
We have found experimentally that the shot noise in InAlAs-InGaAs-InAlAs Triple-Barrier Resonant-Tunneling Diodes (TBRTD) is reduced over the 2eI Poissonian value whenever their differential conductance is positive, and is enhanced over 2eI…
This work presents an analysis of the electronic and optical properties of InAs/GaAs columnar quantum dots (QDs) by performing multi-million-atom tight-binding simulations. The plots of the polarisation-dependent ground state optical…