相关论文: Optical modulation at around 1550 nm in a InGaAlAs…

Embedding a double barrier resonant tunnelling diode (RTD) in an unipolar InGaAlAs optical waveguide gives rise to a very low driving voltage electroabsorption modulator (EAM) at optical wavelengths around 1550 nm. The presence of the RTD…

We report high speed optical modulation in a resonant tunneling relaxation oscillator consisting of a resonant tunneling diode (RTD) integrated with a unipolar optical waveguide and incorporated in a package with a coplanar waveguide…

The integration of a double barrier resonant tunneling diode within a unipolar optical waveguide provides electrical gain over a wide bandwidth. Due to the non-linearities introduced by the double barrier resonant tunneling diode an…

The basic mechanism underlying electric field switching produced by a resonant tunnelling diode (RTD) is analysed and the theory compared with experimental results; agreement to within 12% is achieved. The electro-absorption modulator (EAM)…

We have demonstrated efficient intersubband electroabsorption in InGaAs/InAlGaAs/InAlAs step quantum wells grown by metal-organic vapor phase epitaxy (MOVPE). An absorption modulation of 6 dB at $\lambda=6.0 \mu$m due to Stark shift of the…

Optical characterization of AlGaAs microdisk resonant cavities with a quantum dot active region is presented. Direct passive measurement of the optical loss within AlGaAs microdisk resonant structures embedded with InAs/InGaAs…

We report strong light emission from a room-temperature n-type unipolar-doped In0.53Ga0.47As/AlAs double-barrier resonant-tunneling diode (DBRTD) precisely at the In0.53Ga0.47As band-edge near 1650 nm. The emission characteristics are very…

We report on the analysis of electroabsorption in thin GaAs/Al$_{0.3}$Ga$_{0.7}$As nanophotonic waveguides with an embedded $p$-$i$-$n$ junction. By measuring the transmission through waveguides of different lengths, we derive the…

This work aims to design a CMOS compatible, low-electrical power consumption modulator assisted by plasmons. For compactness and reduction of the electrical power consumption, electro-absorption based on the Franz-Keldysh effect in…

We study theoretically the mode conversion and the associated resonant absorption of p-polarized electromagnetic waves into longitudinal plasma oscillations in cold, unmagnetized and stratified plasmas with periodic spatial density…

We explore the nature of the electroluminescence (EL) emission of purely n-doped GaAs/AlGaAs resonant tunneling diodes (RTDs) and the EL evolution with voltage. A singular feature of such a device is unveiled when the electrical output…

N-polar GaN/AlN resonant tunneling diodes are realized on single-crystal N-polar GaN bulk substrate by plasma-assisted molecular beam epitaxy growth. The room-temperature current-voltage characteristics reveal a negative differential…

We demonstrate a free-space amplitude modulator for mid-infrared radiation (lambda=9.6 um) that operates at room temperature up to at least 20 GHz (above the -3dB cutoff frequency measured at 8.2 GHz). The device relies on the ultra-fast…

The design of some optical devices such as semiconductor optical amplifiers for telecommunication applications requires polarization-insensitive optical emission at the long wavelengths (1300-1550 nm). Self-assembled InAs/GaAs quantum dots…

We report here the first RF noise measurements on two designs of n-doped GaN/AlN double-barrier resonant tunneling diodes (RTDs), each having a room-temperature negative differential resistance (NDR) and also strong near-UV light emission.…

An ultrabroadband upconversion device is demonstrated by direct tandem integration of a p-type GaAs/AlxGa1-xAs ratchet photodetector (RP) with a GaAs double heterojunction LED (DH-LED) using the molecular beam epitaxy (MBE). An…

High-speed back-illuminated uni-traveling-carrier photodiodes at 1064nm were demonstrated grown on InP with 3dB bandwidth of 17.8 GHz at -5 V bias, using InGaAsP as absorption layer. PDs with 40um diameter deliver RF output power levels as…

The photocurrent and the small-signal photoconductance of InGaN/GaN multiple-quantum-well structures were studied at the temperature range from 10 to 300 K. The optical excitation was carried out at the quantum wells intrinsic absorption…

Field enhancement of two-photon absorption from a 50-fs pulse on a silicon ridge waveguide is simulated for a varying energy downward propagating 800+/-9.42 nm wavelength plane-wave orthonormal to a waveguide in 2D FDTD using ANSYS…

We report on the study of the third-order nonlinear optical interactions in In$_{x}$Ga$_{1-x}$As$_{y}$P$_{1-y}$/InP strip-loaded waveguides. The material composition and waveguide structures were optimized for enhanced nonlinear optical…