相关论文: Annealing of radiation induced defects in silicon …

We generate silicon vacancy related defects in high-quality epitaxial silicon carbide layers by means of electron irradiation. By controlling the irradiation fluence, the defect concentration is varied over several orders of magnitude. We…

We experimentally investigated total ionizing dose (TID) response of the input-stage PNP transitor in an operational amplifier LM324N with various initial displacement damage (IDD). We found that, the damage first decreases and then…

The bonding properties of tilt boundary in poly-silicon and the effect of interstitial impurities are investigated by first-principles. In order to obtain thorough information on the nature of chemical bondings in these solid systems, an…

The stability and formation mechanism of the defects relevant to silicon and carbon vacancies at the 4H-SiC(000$\bar{1}$)/SiO$_2$ interface after wet oxidation are investigated by first-principles calculation based on the density functional…

A comparative theoretical study of the damages produced by protons and pions, in the energy range 50 MeV - 50 GeV, in diamond, is presented. The concentration of primary defects (CPD) induced by hadron irradiation is used to describe…

Quantum technologies would benefit from the development of high performance quantum defects acting as single-photon emitters or spin-photon interface. Finding such a quantum defect in silicon is especially appealing in view of its favorable…

A model of interstitial impurity migration is proposed which explains the redistribution of ion-implanted boron in low-temperature annealing of nonamorphized silicon layers. It is supposed that nonequilibrium boron interstitials are…

In the present work, the bulk degradation of SiC in hadron (pion and proton) fields, in the energy range between 100 MeV and 10 GeV, is characterised theoretically by means of the concentration of primary defects per unit fluence. The…

This report is a compilation of authors' calculations of the Lindhard factors, and of the concentration of primary radiation defects per unit particle fluence in different materials for HEP uses.

Neutron irradiation tends to promote disorder in ordered alloys through the action of the thermal spikes that it generates, while simultaneously introducing point defects and defect clusters. As they migrate, these point defects will…

Controlling the quantum properties of individual fluorescent defects in silicon is a key challenge towards advanced quantum photonic devices prone to scalability. Research efforts have so far focused on extrinsic defects based on impurities…

Integrable defects in two-dimensional integrable models are purely transmitting thus topological. By fusing them to integrable boundaries new integrable boundary conditions can be generated, and, from the comparison of the two solved…

The analytical solutions of the equations describing impurity diffusion due to migration of nonequilibrium impurity interstitials were obtained for the impurity redistribution during ion implantation at elevated temperatures and for…

This study delves into the complex mechanisms of defect production and accumulation in nanocrystalline tungsten under irradiation, with a particular focus on the interplay between grain boundaries and free surfaces. Through molecular…

The high luminosity upgrade of the LHC will provide unique physics opportunities, such as the observation of rare processes and precision measurements. However, the accompanying harsh radiation environment will also pose unprecedented…

Mainly due to their outstanding performance the position sensitive silicon detectors are widely used in the tracking systems of High Energy Physics experiments such as the ALICE, ATLAS, CMS and LHCb at LHC, the world's largest particle…

The synergistic effects of neutron and gamma ray radiated PNP transistors are systematically investigated as functions of the neutron fluence, gamma ray dose, and dose rate. We find that the damages show a `tick'-like dependence on the…

In this contribution we discuss how to prepare some possible detectors - only silicon option being considered, for the new era of HEP challenges because the bulk displacement damage in the detector, consequence of irradiation, produces…

The silicon vacancy is a prominent intrinsic defect of cubic SiC (3C-SiC) to which much effort has been devoted so far, experimentally and theoretically. We calculate its properties using the GW approximation that does not suffer from the…

We consider a variety of settings involving chains with one or more defects stemming from the introduction of nodes bearing internal resonators. Motivated by experimental results in woodpile elastic lattices with one or two defects, we…