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相关论文: Zero-field spin splitting in InAs-AlSb quantum wel…

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We consider a two-dimensional electron gas (2DEG) with the Rashba spin-orbit interaction (SOI) in presence of a perpendicular magnetic field. We derive analytical expressions of the density of states (DOS) of a 2DEG with the Rashba SOI in…

介观与纳米尺度物理 · 物理学 2015-05-30 S. K. Firoz Islam , Tarun Kanti Ghosh

The results of the longitudinal and Hall magnetoresistivity measurements in the Shubnikov - de Haas oscillation regime for the HgCdTe/HgTe/HgCdTe heterostructures with a wide (20.3 nm) HgTe quantum well are presented. An anomalous phase…

We have observed that the tunneling magnetoconductance between two-dimensional (2D) electron gases formed at nominally identical InAs-AlSb interfaces most often exhibits two sets of Shubnikov-de Haas oscillations with almost the same…

介观与纳米尺度物理 · 物理学 2009-11-10 Y. Lin , E. M. González , E. E. Mendez , R. Magno , B. R. Bennett , A. S. Bracker

We observed magnetocapacitance oscillations in InAs/GaSb quantum wells separated by a $20$\,nm AlSb middle barrier. By realizing independent ohmic contacts for electrons in InAs and holes in the GaSb layer, we found an out-of-plane…

介观与纳米尺度物理 · 物理学 2024-04-26 A. S. L. Ribeiro , R. Schott , C. Reichl , W. Dietsche , W. Wegscheider

InSb is one of the promising candidates to realize a topological state through proximity induced superconductivity in a material with strong spin-orbit interactions. In two-dimensional systems, thin barriers are needed to allow strong…

The magnetotransport of two dimensional holes in a GaAs/AlGaAs heterostructure is studied experimentally and theoretically. Spin-orbit splitting of the heavy hole band is manifested at high carrier densities in two Shubnikov-de Haas…

介观与纳米尺度物理 · 物理学 2007-05-23 Yuval Yaish , Oleg Prus , Evgeny Buchstab , Gidi Ben Yoseph , Uri Sivan , Iddo Ussishkin , Ady Stern

To an electron moving in free space an electric field appears as a magnetic field which interacts with and can reorient the electron spin. In semiconductor quantum wells this spin-orbit interaction seems to offer the possibility of…

We observe the magnetic oscillation of electric conductance in the two-dimensional InAs/GaSb quantum spin Hall insulator. Its insulating bulk origin is unambiguously demonstrated by the antiphase oscillations of the conductance and the…

介观与纳米尺度物理 · 物理学 2019-09-25 Zhongdong Han , Tingxin Li , Long Zhang , Gerard Sullivan , Rui-Rui Du

Breaking of time-reversal and point-group spatial symmetries can have a profound impact on superconductivity. One of the most extraordinary effects, due to the application of a magnetic field, is represented by the Abrikosov vortices with…

超导电性 · 物理学 2022-04-21 Maria Teresa Mercaldo , Carmine Ortix , Francesco Giazotto , Mario Cuoco

We present magnetotransport measurements performed on two-dimensional hole gases embedded in carbon doped p-type GaAs/AlGaAs heterostructures grown on [001] oriented substrates. A pronounced beating pattern in the Shubnikov-de Haas…

介观与纳米尺度物理 · 物理学 2014-02-28 Fabrizio Nichele , Atindra Nath Pal , Roland Winkler , Christian Gerl , Werner Wegscheider , Thomas Ihn , Klaus Ensslin

High mobility InSb quantum wells with tunable carrier densities are investigated by transport experiments in magnetic fields tilted with respect to the sample normal. We employ the coincidence method and the temperature dependence of the…

Spin-orbit splitting of conduction band in HgTe quantum wells was studied experimentally. In order to recognize the role of different mechanisms, we carried out detailed measurements of the Shubnikov-de Haas oscillations in gated structures…

The frequencies of Shubnikov-de Haas oscillations have long been used to measure the unequal population of spin-split two-dimensional subbands in inversion asymmetric systems. We report self-consistent numerical calculations and…

介观与纳米尺度物理 · 物理学 2009-10-31 R. Winkler , S. J. Papadakis , E. P. De Poortere , M. Shayegan

The carriers in InAs-GaSb double quantum wells are hybrid ``electron-holes''. We study the magnetotransport properties of such particles using a two-component Keldysh technique, which results in a semi-analytic expression for the…

介观与纳米尺度物理 · 物理学 2009-10-31 Y. Naveh , B. Laikhtman

Magneto-transport measurements are performed on two-dimensional GaAs electron systems to probe the quantum Hall (QH) effect at low magnetic fields. Oscillations following the Shubnikov-de Haas (SdH) formula are observed in the transition…

介观与纳米尺度物理 · 物理学 2012-09-14 Shun-Tsung Lo , Yi-Ting Wang , G Bohra , E Comfort , T-Y Lin , M-G Kang , G Strasser , J P Bird , C F Huang , Li-Hung Lin , J C Chen , C-T Liang

Near surface indium arsenide quantum wells have recently attracted a great deal of interest since they can be interfaced epitaxially with superconducting films and have proven to be a robust platform for exploring mesoscopic and topological…

We study Shubnikov-de Haas oscillations in a p-type WSe$_2$ monolayer under very high magnetic field. The oscillation pattern is complex due to a large spin and valley splitting, in the non-fully-resolved Landau level regime. Our…

介观与纳米尺度物理 · 物理学 2020-10-07 Banan Kerdi , Mathieu Pierre , Robin Cours , Bénédicte Warot-Fonrose , Michel Goiran , Walter Escoffier

We perform a theoretical investigation on the time evolution of spin pulses in an $n$-type GaAs (001) quantum well with and without external electric field at high temperatures by constructing and numerically solving the kinetic spin Bloch…

材料科学 · 物理学 2007-05-23 L. Jiang , M. Q. Weng , M. W. Wu , J. L. Cheng

We present molecular beam epitaxial grown single- and double-side $\delta$-doped InAlSb/InSb quantum wells with varying distances down to 50 nm to the surface on GaSb metamorphic buffers. We analyze the surface morphology as well as the…

材料科学 · 物理学 2018-05-15 Ch. A. Lehner , T. Tschirky , T. Ihn , W. Dietsche , J. Keller , S. Fält , W. Wegscheider

We have studied Shubnikov-de Haas oscillations in a two-dimensional electron system in silicon at low electron densities. Near the metal-insulator transition, only "spin" minima of the resistance at Landau-level filling factors 2, 6, 10,…

强关联电子 · 物理学 2007-05-23 S. V. Kravchenko , A. A. Shashkin , David A. Bloore , T. M. Klapwijk