相关论文: Towards single-electron metrology

The single electron transistor (SET) offers unparalled opportunities as a nano-scale electrometer, capable of measuring sub-electron charge variations. SETs have been proposed for read-out schema in solid-state quantum computing where…

Electronic transport properties for single-molecule junctions have been widely measured by several techniques, including mechanically controllable break junctions, electromigration break junctions or by means of scanning tunneling…

Single Electron Transistors (SETs) are nanoscale electrometers of unprecedented sensitivity, and as such have been proposed as read-out devices in a number of quantum computer architectures. We show that the functionality of a standard SET…

Controlling electrons at the level of elementary charge $e$ has been demonstrated experimentally already in the 1980's. Ever since, producing an electrical current $ef$, or its integer multiple, at a drive frequency $f$ has been in a focus…

The quantum conductance of the single-electron tunneling (SET) transistor is investigated in this paper by the functional integral approach. The formalism is valid for arbitrary tunnel resistance of the junctions forming the SET transistor…

A single-electron tunneling (SET) device with a nanoscale central island that can move with respect to the bulk source- and drain electrodes allows for a nanoelectromechanical (NEM) coupling between the electrical current through the device…

A single-electron tunneling (SET) device with a nanoscale central island that can move with respect to the bulk source- and drain electrodes allows for a nanoelectromechanical (NEM) coupling between the electrical current through the device…

Exploring the use of individual molecules as active components in electronic devices has been at the forefront of nanoelectronics research in recent years. Compared to semiconductor microelectronics, modeling transport in single-molecule…

Increasing penetration of renewable energy introduces significant uncertainty into power systems. Traditional simulation-based verification methods may not be applicable due to the unknown-but-bounded feature of the uncertainty sets.…

Research on organic thin-film transistors tends to focus on improvements in device performance, but very little is understood about the ultimate limits of these devices, the microscopic physical mechanisms responsible for their limitations,…

Dots are ideal systems to study fundamentals on heat transfer at the nanoscale and promising nanoscale heat-engines and thermal devices. Here, we report on the validation of our theoretical model on the thermal conductance of a metallic dot…

We investigate qubit measurements using a single electron transistor (SET). Applying the Schr\"odinger equation to the entire system we find that an asymmetric SET is considerably more efficient than a symmetric SET. The asymmetric SET…

We study a single electron transistor (SET) based upon a II-VI semiconductor quantum dot doped with a single Mn ion. We present evidence that this system behaves like a quantum nanomagnet whose total spin and magnetic anisotropy depend…

The quantum efficiency, which characterizes the quality of information gain against information loss, is an important figure of merit for any realistic quantum detectors in the gradual process of collapsing the state being measured. In this…

Tunneling of single electrons has been thoroughly studied both theoretically and experimentally during last ten years. By the present time the basic physics is well understood, and creation of useful single-electron devices becomes the…

First-principles techniques for electronic transport property prediction have seen rapid progress in recent years. However, it remains a challenge to model heterostructures incorporating variability due to fabrication processes.…

We present a method for measuring single spins embedded in a solid by probing two electron systems with a single electron transistor (SET). Restrictions imposed by the Pauli Principle on allowed two electron states mean that the spin state…

Transistors, regardless of their size, rely on electrical gates to control the conductance between source and drain contacts. In atomic-scale transistors, this conductance is exquisitely sensitive to single electrons hopping via individual…

We formulate a unified definition of the statistical effective temperature (SET) for finite-dimensional classical and quantum systems using dimension-dependent indices of purity derived from the eigenvalue spectrum. This spectral approach…

We report on experimental results for the conductance of metallic single-electron transistors as a function of temperature, gate voltage and dimensionless conductance. In contrast to previous experiments our transistor layout allows for a…