相关论文: Conducting phase in the two-dimensional disordered…

The mechanism that drives a metal-insulator transition in an undoped quasi-one-dimensional Mott insulator is examined in the framework of the Hubbard model with two different hoppings t_{perp 1} and t_{perp 2} between nearest-neighbor…

We investigate the metal insulator transitions at finite temperature for the Hubbard model with diagonal alloy disorder. We solve the dynamical mean field theory equations with the non crossing approximation and we use the coherent…

We study the transition from paramagnetic metal to paramagnetic insulator by finite temperature Quantum Monte-Carlo simulations for the 2D Hubbard model at half-filling. Working at the moderately high temperature T=0.33*t where the spin…

We show that there are qualitative differences between the temperature dependence of the spin and charge correlations in the normal state of the 2D attractive Hubbard model using quantum Monte Carlo simulations. The one-particle density of…

In a recent experiment, Lai et al. [Phys. Rev. B 75 (2007) 033314] studied the apparent metal-insulator transition (MIT) of a Si quantum well structure. Tuning the charge carrier concentration n, they measured the conductivity sigma(T,n)…

We study the doping-driven Mott metal-insulator transition for multi-orbital Hubbard models with Hund's exchange coupling at finite temperatures. As in the single-orbital Hubbard model, the transition is of first-order within dynamical mean…

The temperature dependences of the conductivity \sigma(T) for strongly interacting 2D electron system in silicon have been analyzed both in zero magnetic field and in spin-polarizing magnetic field of 14.2T, parallel to the sample plane.…

The interaction-driven evolution from a Fermi liquid to a Mott insulator is a hallmark of strongly correlated fermion systems. In this work, we present a {\it numerically unbiased} study of such metal-to-insulator crossover in the…

In a recent publication [Chen et al., Phys. Rev. B 86, 165136 (2012)], we identified a line of Lifshitz transition points separating the Fermi liquid and pseudogap regions in the hole-doped two dimensional Hubbard model. Here we extend the…

Two recent experiments from Cornell and Columbia have reported insulator-to-metal transitions in two-dimensional (2D) moir\'e transition metal dichalcogenides (mTMD) induced by doping around half-filling, where the system is a Mott…

The $2d$ Hubbard model with nearest-neighbour hopping on the square lattice and an average of one electron per site is known to undergo an extended crossover from metallic to insulating behavior driven by proliferating antiferromagnetic…

Motivated by the resistive switchings in transition-metal oxides (TMOs) induced by a voltage bias, we study the far-from-equilibrium dynamics of an electric-field-driven strongly-correlated model featuring a first-order insulator-to-metal…

The Quantum Monte Carlo simulations of the ionic Hubbard model on a two-dimensional square lattice at half filling were performed. The method based on the direct-space, proposed by Suzuki and al., Hirsch and al., was used. Cycles of…

We present a model for the metal-insulator transition in 2D, observed in the recent years. Our starting point consists of two ingredients only, which are ubiquitous in the experiments: Coulomb interactions and weak disorder spin-orbit…

The temperature dependence of the conductance of a quantum point contact has been measured. The conductance as a function of the Fermi energy shows temperature-independent fixed points, located at roughly multiple integers of $e^{2}/h$.…

Using the determinant quantum Monte Carlo method, we investigate the metal-insulator transition in the interacting disordered Hubbard model of a Lieb lattice, in which the system characterizes the flat band centered at the Fermi level. By…

We review the scaling theory of disordered itinerant electrons with e-e interactions. We first show how to adjust the microscopic Fermi-liquid theory to the presence of disorder. Then we describe the non-linear sigma model (NLSM) with…

We study a two-band Hubbard model using the dynamical mean-field theory combined with the exact diagonalization method. At the electron density $n=2$, a transition from a band-insulator to a correlated semimetal occurs when the on-site…

Spin and charge fluctuations at vicinity of metal-to-Mott insulator transitions are studied in an organic solid with molecular dimers. The extended Hubbard model taking account of the internal electronic degree of freedom in a molecular…

We study a spinless two-band model at half-filling in the limit of infinite dimensions. The ground state of this model in the non-interacting limit is a band-insulator. We identify transitions to a metal and to a charge-Mott insulator,…