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相关论文: Metal-insulator transition in the one-dimensional …

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The one-dimensional SU$(n)$ Hubbard model is investigated numerically for $n=2,3,4$, and 5 at half filling and $1/n$ filling using the density-matrix renormalization-group (DMRG) method. The energy gaps and various quantum information…

强关联电子 · 物理学 2015-06-25 K. Buchta , Ö. Legeza , E. Szirmai , J. Sólyom

We investigate nonmagnetic metal-insulator transition in the 1/5-depleted square lattice Hubbard model at half-filling within the 8-site cellular dynamical mean field theory. We find that a metal-insulator transition without any signatures…

强关联电子 · 物理学 2014-08-19 Yuki Yanagi , Kazuo Ueda

We investigate the metal-insulator transition in the half-filled Hubbard model on a two-dimensional triangular lattice using both the Kotliar-Ruckenstein slave-boson technique, and exact numerical diagonalization of finite clusters.…

强关联电子 · 物理学 2007-08-07 Massimo Capone , Luca Capriotti , Federico Becca , Sergio Caprara

We use the Kotliar-Ruckenstein slave boson technique to treat the strong correlation of the Hubbard model. In a first part we discuss the metal to insulator transition that is occurring on the honeycomb lattice at half filling. We find the…

凝聚态物理 · 物理学 2007-05-23 Raymond Fresard , Klaus Doll

The Quantum Monte Carlo simulations of the ionic Hubbard model on a two-dimensional square lattice at half filling were performed. The method based on the direct-space, proposed by Suzuki and al., Hirsch and al., was used. Cycles of…

强关联电子 · 物理学 2010-02-02 Bernard Martinie

We study the Mott transition in Hubbard models with a degenerate band on different 3-dimensional lattices. While for a non-degenerate band only the half-filled system may exhibit a Mott transition, with degeneracy there can be a transition…

强关联电子 · 物理学 2009-10-31 Erik Koch , Olle Gunnarsson , Richard M. Martin

Mott metal-insulator transitions in an M-fold orbitally degenerate Hubbard model are studied by means of a generalization of the linearized dynamical mean-field theory. The method allows for an efficient and reliable determination of the…

强关联电子 · 物理学 2009-11-07 Y. Ono , M. Potthoff , R. Bulla

We use Quantum Monte Carlo methods to determine $T=0$ Green functions, $G(\vec{r}, \omega)$, on lattices up to $16 \times 16$ for the 2D Hubbard model at $U/t =4$. For chemical potentials, $\mu$, within the Hubbard gap, $ |\mu | < \mu_c$,…

凝聚态物理 · 物理学 2009-10-28 F. F. Assaad , M. Imada

The interaction-driven evolution from a Fermi liquid to a Mott insulator is a hallmark of strongly correlated fermion systems. In this work, we present a {\it numerically unbiased} study of such metal-to-insulator crossover in the…

强关联电子 · 物理学 2026-02-27 Mingzhong Lu , Yu-Feng Song , Youjin Deng , Yuan-Yao He

We investigate the doping-driven metal-insulator transition of the (2+1)-dimensional Hubbard model in the path-integral formalism with the tensor renormalization group method. We calculate the electron density $\langle n\rangle$ as a…

强关联电子 · 物理学 2022-03-23 Shinichiro Akiyama , Yoshinobu Kuramashi , Takumi Yamashita

The correlation-driven metal-insulator (Mott) transition at a solid surface is studied within the Hubbard model for a semi-infinite lattice by means of the dynamical mean-field theory. The transition takes place at a unique critical…

强关联电子 · 物理学 2009-10-31 M. Potthoff , W. Nolting

Using finite-temperature determinantal quantum Monte Carlo simulations, we examine the thermodynamic properties of the extended Hubbard model on the half-filled square lattice in the Slater regime at intermediate coupling. We consider both…

强关联电子 · 物理学 2022-10-19 Alexander Sushchyev , Stefan Wessel

Around a metal-to-insulator transition driven by repulsive interaction (Mott transition) the single particle excitations and the collective excitations are equally important. Here we present results for the generic susceptibilities at zero…

强关联电子 · 物理学 2009-04-03 Carsten Raas , Götz S. Uhrig

We investigate the superfluid-insulator transition of one-dimensional interacting Bosons in both deep and shallow periodic potentials. We compare a theoretical analysis based on Monte-Carlo simulations in continuum space and Luttinger…

The metal-insulator transition of the quarter-filled Hubbard model on triangular lattice is studied at the mean field level. We find a quasi-one dimensional metallic state with a collinear magnetic order competes closely with an insulating…

强关联电子 · 物理学 2010-01-06 Tao Li

We examine the metal-insulator transition in a half-filled Hubbard model of electrons with random and all-to-all hopping and exchange, and an on-site non-random repulsion, the Hubbard $U$. We argue that recent numerical results of Cha et…

强关联电子 · 物理学 2020-05-13 Grigory Tarnopolsky , Chenyuan Li , Darshan G. Joshi , Subir Sachdev

Mott-Hubbard metal-insulator transitions in $N$-fold degenerate Hubbard models are studied within the Gutzwiller approximation. For any rational filling with $x$ (integer) electrons per site it is found that metal-insulator transition…

凝聚态物理 · 物理学 2009-10-22 Jian Ping Lu

We study the transitions from band insulator to metal to Mott insulator in the ionic Hubbard model on a two dimensional square lattice using determinant Quantum Monte Carlo. Evaluation of the temperature dependence of the conductivity…

强关联电子 · 物理学 2009-11-11 N. Paris , K. Bouadim , F. Hebert , G. G. Batrouni , R. T. Scalettar

Correlated electrons in a binary alloy $A_{x}B_{1-x}$ are investigated within the Hubbard model and dynamical mean--field theory (DMFT). The random energies $\epsilon_{i}$ have a bimodal probability distribution and an energy separation…

强关联电子 · 物理学 2009-11-10 Krzysztof Byczuk , Walter Hofstetter , Dieter Vollhardt

The Mott metal-insulator transition in the two-band Hubbard model in infinite dimensions is studied by using the linearized dynamical mean-field theory recently developed by Bulla and Potthoff. The phase boundary of the metal-insulator…

强关联电子 · 物理学 2009-10-31 Y. Ono , R. Bulla , A. C. Hewson
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