相关论文: Binding energy of localized biexcitons in quantum …
We consider a model describing the one-dimensional confinement of an exciton in a symmetrical, rectangular quantum-well structure and derive upper and lower bounds for the binding energy $E_b$ of the exciton. Based on these bounds, we study…
We present a first-principle path integral Monte-Carlo (PIMC) study of the binding energy of excitons, trions (positively and negatively charged excitons) and biexcitons bound to single-island interface defects in quasi-two-dimensional…
Excitonic systems localized in a single InAs/GaAs parabolic quantum dot are studied theoretically using an unrestricted Hartree-Fock method. The binding energies of excitons, conventional biexcitons and quadrons - four particles system of…
A variational calculation of the ground-state energy of neutral excitons and of positively and negatively charged excitons (trions) confined in a single-quantum well is presented. We study the dependence of the correlation energy and of the…
A simple illustrative wave function with only three variational parameters is suggested to calculate the binding energy of negatively charged excitons (X-) as a function of quantum well width. The results of calculations are in agreement…
A variational calculation of the ground state of a neutral exciton and of positively and negatively charged excitons (trions) in single quantum well is presented. We study the dependance of the correlation energy and of the binding energy…
The binding energy and the corresponding wave function of excitons in GaAs-based finite square quantum wells (QWs) are calculated by the direct numerical solution of the three-dimensional Schroedinger equation. The precise results for the…
A variational calculus method is applied for hydrogen-like impurities states and exciton states in AlGaAs/GaAs quantum wells within the effective masses approach. The hamiltonian is separated into radial and transversal parts to be…
A comprehensive experimental investigation of exciton and biexciton recombination in GaAs/AlGaAs quantum wells is presented. Exciton and biexciton recombination times are found to be 16 and 55 ps, respectively. A method of determining the…
We demonstrate an electrostatic trap for indirect excitons in a field-effect structure based on coupled GaAs quantum wells. Within the plane of a double quantum well indirect excitons are trapped at the perimeter of a SiO2 area sandwiched…
We theoretically study biexcitons and quadrons in quantum dots with parabolic confinement and give a complete comparison between the two excitations. The calculation of quadron and biexciton binding energies as functions of electron-to-hole…
A theory of bipolaron states in quantum wires with a parabolic potential well is developed applying the Feynman variational principle. The basic parameters of the bipolaron ground state (the binding energy, the number of phonons in the…
A theoretical model, which relates the binding energy of a positively charged exciton in a quantum dot with the confinement energy is presented. It is shown that the binding energy, defined as the energy difference between the corresponding…
We present a model to take into account the interface defects contribution on the binding energy of charged exciton in GaAs/Al$_{0.3}$Ga$_{0.7}$As quantum wells. The dependence of the binding energy gain and of the trion size on the quantum…
A re-ordered valence band in GaN/AlGaN quantum wells with respect to GaN epilayers has been found as a result of the observation of an enhanced g-factor in magneto-luminescence spectra in fields up to 55 T. This has been caused by a…
This theoretical paper offers an explicit expression for the binding energy of excitons in a two-dimensional semiconductor with a flat valence band. The formula has been derived quasiclassically assuming that the exciton is tightly bound;…
We calculate energies, oscillator strengths for radiative recombination, and two-particle wave functions for the ground state exciton and around 100 excited states in a T-shaped quantum wire. We include the single-particle potential and the…
It is experimentally shown that the pressure applied along the twofold symmetry axis of a heterostructure with a wide GaAs/AlGaAs quantum well leads to considerable modification of the polariton reflectance spectra. This effect is treated…
The effective Hamiltonian describing the motion of an exciton in an external non-homogeneous magnetic field is derived. The magnetic field plays the role of an effective potential for the exciton motion, results into an increment of the…
The trapping of excitons in a semiconductor quantum well due to a circular symmetric nonhomogeneous magnetic field is studied. The effect of the spin state of the exciton on its trapping energy is analyzed, and the importance of the…