相关论文: Electronic structure of strained InP/GaInP quantum…

We report on the detection of the intrinsic spin Hall effect in a modulation doped Al-GaAs/GaAs/AlGaAs heterostructure bounded by a self-aligned pn-junction, fabricated by the cleaved edge overgrowth method. Light emission due to the…

The modification of acoustic phonons in semiconductor nanostructures embedded in a host crystal is investigated including corrections due to strain within continuum elasticity theory. Effective elastic constants are calculated employing…

One remarkable feature of strongly correlated systems is the phenomenon of fractionalization where quasiparticles carry only a fraction of the charge or spin of the elementary constituents. Such quasiparticles often present anyonic…

We present an atomistic description of the electronic and optical properties of $\text{In}_{0.25}\text{Ga}_{0.75}$N/GaN quantum wells. Our analysis accounts for fluctuations of well width, local alloy composition, strain and built-in field…

The possibility of realizing topological insulators by spontaneous formation of electronic superstructure is theoretically investigated in a minimal two-orbital model including both the spin-orbit coupling and electron correlations on a…

Spin-polarized DFT has been used to perform a comprehensive study of the geometric structures and electronic properties for isolated M4X4 nano-clusters between their two stable isomers - a planar rhombus-like 2D structure and a cubane-like…

Electronic States of Si and Ge QDs of 5 to 3127 atoms with saturated shapes in a size range of 0.57 to 4.92 nm for Si and 0.60 to 5.13 nm for Ge are calculated by using an empirical tight binding model combined with the irreducible…

In a tight binding framework, we analyze the characteristics of electronic states in strongly disordered materials (hopping sites are placed randomly with no local order) with tunneling matrix elements decaying exponentially in the atomic…

The states of two electrons in tunnel-coupled semiconductor quantum dots can be effectively described in terms of a two-spin Hamiltonian with an isotropic Heisenberg interaction. A similar description needs to be generalized in the case of…

We present here the first experimental study of Wigner islands formed by electrons floating over helium. Electrons are trapped electrostatically in a mesoscopic structure covered with a helium film, behaving as a quantum dot. By removing…

The effect of an electric field on spin precession in In0.5Ga0.5As/GaAs self-assembled quantum dots is calculated using multiband real-space envelope-function theory. The dependence of the Lande' g tensor on electric fields should permit…

The real-space localized hole pair is constructed in the Cu-O plane of the hole-doped cuprate superconductors. We prove analytically and numerically that two electrons, due to the nearest-neighbor Coulomb repulsive confinement effect, can…

A self-consistent calculation of the electronic properties of GaAlAs:Mn magnetic semiconductor quantum well structures is performed including the Hartree term and the sp-d exchange interaction with the Mn magnetic moments. The spin…

Coulomb blockade is observed in a graphene nanoribbon device with a top gate. When two pn junctions are formed via the back gate and the local top gate, electrons are confined between the pn junctions which act as the barriers. When no pn…

In the Quantum Hall regime, near integer filling factors, electrons should only be transmitted through spatially-separated edge states. However, in mesoscopic systems, electronic transmission turns out to be more complex, giving rise to a…

We have calculated the conduction-to-conduction and valence-to-valence absorption spectrum of bound states in (In,Ga)As/GaAs quantum dots charged with up to three electrons or holes. Several features emerge: (i) In pure (non-alloyed)…

Density-functional studies of the electron states in the dilute magnetic semiconductor GaN:Mn reveal major differences for the case of the Mn impurity at the substitutional site Mn_Ga versus the interstitial site Mn_I. The splitting of the…

We investigate the electrostatic confinement of charge carriers in a gapped graphene quantum dot in the presence of a magnetic flux. The circular quantum dot is defined by an electrostatic gate potential delimited in an infinite graphene…

We report single layer resistivities of 2-dimensional electron and hole gases in an electron-hole bilayer with a 10nm barrier. In a regime where the interlayer interaction is stronger than the intralayer interaction, we find that an…

Absorption spectra of neutral, negatively and positively charged semiconductor quantum dots are studied theoretically. We provide an overview of the main energetic structure around the p-shell transitions, including the influence of nearby…