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相关论文: Mott-Hubbard insulators for systems with orbital d…

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A general multi-orbital Hubbard model, which includes on-site inter-orbital electron hoppings, is introduced and studied. It is shown that the on-site inter-orbital single electron hopping is one of the most basic interactions. Two electron…

强关联电子 · 物理学 2012-07-10 Qingguo Feng , Peter M. Oppeneer

We study the effects of interorbital hopping on orbital fluctuations and Mott-Hubbard metal-insulator transition (MIT) in the two-orbital Hubbard model within the extended linearized dynamical mean-field theory. By mapping the model onto an…

强关联电子 · 物理学 2009-11-11 Yun Song , Liang-Jian Zou

We consider the orbitally degenerate 3-band Hubbard model with on-site interactions which favor low spin and low orbital angular momentum using standard second order perturbation theory in the large Hubbard-U limit. At even integer filling…

强关联电子 · 物理学 2009-11-10 M. Granath , S. Ostlund

The Mott-Hubbard transition is studied for a Hubbard model with orbital degeneracy N, using a diffusion Monte-Carlo method. Based on general arguments, we conjecture that the Mott-Hubbard transition takes place for U/W \propto \sqrt{N},…

凝聚态物理 · 物理学 2009-10-28 Olle Gunnarsson , Erik Koch , Richard M. Martin

The effect of interorbital hopping on the orbital selective Mottness in a two-band correlation system is investigated by using the dynamical mean-field theory with the Lanczos method as impurity solver. We construct the phase diagram of the…

强关联电子 · 物理学 2021-12-10 Yu Ni , Jian Sun , Ya-Min Quan , Yun Song

We study the electronic spectral properties at zero temperature of the one-dimensional (1D) version of the degenerate two-orbital Kanamori Hubbard model (KHM), one of the well established frameworks to study transition metal compounds,…

强关联电子 · 物理学 2022-03-04 N. Aucar Boidi , H. Fernández García , Y. Núñez-Fernández , K. Hallberg

In strongly correlated electron systems the constraint which prohibits the double electron occupation at local sites can be realized by either the infinite Coulomb interaction or the correlated hopping interaction described by the Hubbard…

强关联电子 · 物理学 2019-04-30 Xiao-Yong Feng , Jianhui Dai

Recent advances in the field of quantum Monte Carlo simulations for impurity problems allow --within dynamical mean field theory-- for a more thorough investigation of the two-band Hubbard model with narrow/wide band and SU(2)-symmetric…

统计力学 · 物理学 2007-05-23 R. Arita , K. Held

We study analytically the Mott transition of the N-orbital Hubbard model using dynamical mean-field theory and a low-energy projection onto an effective Kondo model. It is demonstrated that the critical interaction at which the insulator…

强关联电子 · 物理学 2009-11-07 S. Florens , A. Georges , G. Kotliar , O. Parcollet

Using Quantum Monte Carlo we compute thermodynamics and spectra for the orbitally degenerate Hubbard model in infinite spatial dimensions. With increasing orbital degeneracy we find in the one-particle spectra: broader Hubbard bands…

强关联电子 · 物理学 2009-10-31 J. E. Han , M. Jarrell , D. L. Cox

We investigate the Mott transition in infinite dimensions in the orbitally degenerate Hubbard model. We find that the qualitative features of the Mott transition found in the one band model are also present in the orbitally degenerate case.…

凝聚态物理 · 物理学 2015-06-25 Henrik Kajueter , Gabriel Kotliar

By using a combination of detailed experimental studies and simple theoretical arguments, we identify a novel mechanism characterizing the hopping transport in the Mott insulating phase of Ca$_{2-x}$Sr$_x$RuO$_4$ near the metal-insulator…

强关联电子 · 物理学 2009-11-10 S. Nakatsuji , V. Dobrosavljevic , D. Tanaskovic , M. Minakata , H. Fukazawa , Y. Maeno

In the present paper we propose a doubly orbitally degenerate narrow-band model with correlated hopping. The peculiarity of the model is taking into account the matrix element of electron-electron interaction which describes intersite…

强关联电子 · 物理学 2009-10-31 L. Didukh , Yu. Skorenkyy , Yu. Dovhopyaty , V. Hankevych

The Mott transition in a multi-orbital Hubbard model involving subbands of different widths is studied within the dynamical mean field theory. Using the iterated perturbation theory for the quantum impurity problem it is shown that at low…

强关联电子 · 物理学 2009-11-10 A. Liebsch

We investigate a quarter-filled two-band Hubbard model involving a crystal-field splitting, which lifts the orbital degeneracy as well as an inter-orbital hopping (inter-band hybridization). Both terms are relevant to the realistic…

强关联电子 · 物理学 2008-07-28 Alexander I. Poteryaev , Michel Ferrero , Antoine Georges , Olivier Parcollet

Microscopic models of electronic subsystems with orbital degeneracy of energy states and non-diagonal matrix elements of electron interactions (correlated hopping) are considered within the configuration-operator approach. Equations for…

强关联电子 · 物理学 2021-01-19 Yu. Skorenkyy , O. Kramar , Yu. Dovhopyaty

We investigate effects of Coulomb interaction and hopping transport in the insulator phase of granular metals and quantum dot arrays. We consider a spatially periodic as well as an irregular array, including disorder in a form of a random…

介观与纳米尺度物理 · 物理学 2009-11-11 I. S. Beloborodov , A. V. Lopatin , V. M. Vinokur

The photoemission spectrum and the specific heat are studied in the Hubbard model of small clusters including orbital degeneracy. We focus on the degeneracy and valence dependence in the limit of a large Coulomb interaction. For integer…

强关联电子 · 物理学 2009-10-30 O. Gunnarsson

We study the Mott metal-insulator transition in the two-band Hubbard model with different hopping amplitudes $t_1$ and $t_2$ for the two orbitals on the two-dimensional square lattice by using {\it non-magnetic} variational wave functions,…

强关联电子 · 物理学 2016-02-18 Luca F. Tocchio , Federico Arrigoni , Sandro Sorella , Federico Becca

I investigate band and Mott insulating states in a two-band Hubbard model, with the aim of understanding the differences between the idealised one-orbital model and the more realistic multi-band case. Using a projection ansatz I show that…

强关联电子 · 物理学 2009-11-13 J. P. Hague
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