相关论文: Is a doped 'Kondo' insulator different from doped …

How superconductivity emerges in the vicinity of an antiferromagnetic insulating state is a long-standing issue of strong correlation physics. We study the transition from an antiferromagnetic insulator to a superconductor by hole-doping…

Temperature dependent thermoelectric power (TEP) data on Ba(Fe1-xTMx)2As2 (TM = Co and Cu), complemented by the Hall coefficient data on the samples from the same batches, have been measured. For Co-doping we clearly see a change in the…

At low energy scales charge transport in the insulating Si:P is dominated by activated hopping between the localized donor electron states. Thus, theoretical models for a disordered system with electron-electron interaction are appropriate…

Quantum oscillations in hole doped high temperature superconductors are difficult to understand within the prevailing views. An emerging idea is that of a putative normal ground state, which appears to be a Fermi liquid with a reconstructed…

We study the electronic structure of the doped paramagnetic insulator by finite temperature Quantum Monte-Carlo simulations for the 2D Hubbard model. Throughout we use the moderately high temperature T=0.33t, where the spin correlation…

Ion implantation of Fe and Mn into Al thin films was used for effective modification of Al superconductive properties. Critical temperature of the transition to superconducting state was found to decrease gradually with implanted Fe…

We report semiconductor to metal-like crossover in temperature dependence of resistivity ($\rho$) due to the switching of charge transport from bulk to surface channel in three-dimensional topological insulator…

We report experimental studies of disorder-induced transitions between quantum-Hall, metallic, and insulating states in a very dilute two-dimensional electron system in silicon at a magnetic field corresponding to Landau level filling…

We measured the magnetoresistance as a function of temperature down to 20mK and magnetic field for a set of underdoped PrCeCuO (x=0.12) thin films with controlled oxygen content. This allows us to access the edge of the superconducting dome…

It is shown that the electronic conduction in silicon-on-insulator (SOI) layers exhibits a metallic regime which is very similar to that in high-mobility Si-metal oxide semiconductor structures (MOS). The peak in the electron mobility…

Electronic structures of FeSi and Fe$_{1.02}$Si$_{0.98}$ under pressure (achieved through volume compression) have been investigated by using DFT+DMFT and KKR-CPA methods, respectively. The widening of band-gap with increasing pressure…

For densities above $n=1.6 \times 10^{11}$ cm$^{-2}$ in the strongly interacting system of electrons in two-dimensional silicon inversion layers, excellent agreement between experiment and the theory of Zala, Narozhny and Aleiner is…

We have investigated the effect of Cu substitution in Eu2(Ir1-xCux)2O7 with the help of magnetic and transport property measurements. XPS measurement reveals that each Cu2+ converts Ir4+ to double amount of Ir5+ ions. The metal-insulator…

Superconductivity with zero resistance transition temperature (Tc) up to 8.4 K and 8.3 K can be obtained by doping cobalt and sodium in alfa-FeSe with the nominal composition of Fe0.92Co0.08Se and Na0.1FeSe, respectively. The electrical…

Magnetization and magnetoresistance have been measured in insulating antiferromagnetic La_{2}Cu_{0.97}Li_{0.03}O_{4} over a wide range of temperatures, magnetic fields, and field orientations. The magnetoresistance step associated with a…

We report the resistivity of a series of fluorine-doped SmFeAsO1-xFx polycrystalline superconductors in magnetic fields up to 60T. For underdoped samples (x < 0.15), the low temperature resistive state is characterized by pronounced…

We demonstrate that the differential conductance, $dI/dV$, measured via spectroscopic imaging scanning tunneling microscopy in the doped iron chalcogenide FeSe$_{0.45}$Te$_{0.55}$, possesses a series of characteristic features that allow…

Temperature dependent transport of disordered electronic systems is examined in the presence of strong correlations. In contrast to what is assumed in Fermi liquid approaches, finite temperature behavior in this regime proves largely…

We study the electronic state of the doped Mott-Hubbard insulator within Dynamical Mean Field Theory. The evolution of the finite temperature spectral functions as a function of doping show large redistributions of spectral weight in both…

Because it is easily switched from insulator to metal either via chemical doping or electrical gating, silicon is at the core of modern information technology and remains a candidate platform for quantum computing. The metal-to-insulator…