相关论文: Far-infrared and capacitance spectroscopy of self-…

The many-particle ground state and excitations of self-assembled InAs quantum dots are investigated using far-infrared (FIR) and capacitance spectroscopy. The contributions of quantization and charging energies to the $n$--electron energy…

Using far-infrared spectroscopy, we investigate the excitations of self-organized InAs quantum dots as a function of the electron number per dot, 1<n<6, which is monitored in situ by capacitance spectroscopy. Whereas the well-known two-mode…

The ground state and the excitation spectrum of strongly correlated electrons in quantum dots are investigated. An analytical solution is constructed by exact diagonalization of the Hamiltonian in terms of the $N$-particle eigenmodes.

We study the effects of electron-electron correlations and confinement potential on the far-infrared spectrum of a lateral two-electron quantum dot molecule by exact diagonalization. The calculated spectra directly reflect the lowered…

Sequential single-electron charging is observed in InAs Self-Assembled Quantum Dots using capacitance spectroscopy. In this system, the Coulomb energy is smaller than the inter-level energy spacings due to the quantum confinement and both…

Self-assembled quantum dots have remarkable optical, electronic and spintronic properties that make them leading candidates for quantum information technologies. Their characterization requires rapid and local determination of both charge…

We use frequency-dependent capacitance-voltage spectroscopy to measure the tunneling probability into self-assembled InAs quantum dots. Using an in-plane magnetic field of variable strength and orientation, we are able to obtain information…

We report on high-resolution photoluminescence (PL) spectroscopic and microscopic study of laterally coupled InAs/GaAs self-assembled quantum dots by using a low-temperature near-field scanning optical microscope. We have observed slightly…

We study ground states and excited states in semiconductor quantum dots containing 1 to 12 electrons. For the first time, it is possible to identify the quantum numbers of the states in the excitation spectra and make a direct comparison to…

Measurements and a theoretical interpretation of the excitation spectrum of a two-electron quantum dot fabricated on a parabolic Ga[Al]As quantum well are reported. Experimentally, excited states are found beyond the well-known lowest…

Recent photoabsorption measurements have revealed a rich fine structure in the collective charge-density excitation spectrum of few-electron quantum dots in the presence of magnetic fields. We have performed systematic computational studies…

We study effects of electron-electron interactions and confinement potential on the magneto-optical absorption spectrum in the far-infrared range of lateral quantum dot molecules. We calculate far-infrared (FIR) spectra for three different…

We study optically single self-assembled quantum dots embedded within the wide quantum well of a mixed type quantum structure. We compare the steady state and pulsed photoluminescence spectra of these dots to those of previously studied…

We study electronic configurations in a single pair of vertically coupled self-assembled InAs quantum dots, holding just a few electrons. By comparing the experimental data of non-linear single-electron transport spectra in a magnetic field…

The spectral properties of up to four interacting electrons confined within a quasi one--dimensional system of finite length are determined by numerical diagonalization including the spin degree of freedom. The ground state energy is…

The electronic continuum states of InAs/GaAs semiconductor quantum dots embedded in a GaAs/AlAs superlattice are theoretically investigated and the far infrared absorption spectra are calculated for a variety of structures and…

We use magnetotunnelling spectroscopy as a non-invasive probe to produce two-dimensional spatial images of the probability density of an electron confined in a self-assembled semiconductor quantum dot. The images reveal clearly the…

The electronic and optical properties of self-assembled InN/GaN quantum dots (QDs) are investigated by means of a tight-binding model combined with configuration interaction calculations. Tight-binding single particle wave functions are…

The electronic properties of semiconductor, vertical, double quantum dot systems with few electrons are investigated by means of analytic, configuration-interaction, and mean-field methods. The combined effect of a high magnetic field,…

We present a comprehensive study of the optical transitions and selection rules of variably charged single self-assembled InAs/GaAs quantum dots. We apply high resolution polarization sensitive photoluminescence excitation spectroscopy to…