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相关论文: Geometrical-confinement effects on excitons in qua…

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Theory of exciton fine structure in semiconductor quantum dots and its dependence on quantum dot anisotropy and external lateral electric field is presented. The effective exciton Hamiltonian including long range electron-hole exchange…

介观与纳米尺度物理 · 物理学 2015-05-14 Eugene Kadantsev , Pawel Hawrylak

We present a theory of excitonic processes in gate controlled graphene quantum dots. The dependence of the energy gap on shape, size and edge for graphene quantum dots with up to a million atoms is predicted. Using a combination of…

介观与纳米尺度物理 · 物理学 2015-05-19 A. D. Guclu , P. Potasz , P. Hawrylak

A systematic study of the impact of annealing on the electronic properties of single InAs/GaAs quantum dots (QDs) is presented. We are able to record single QD cathodoluminescence spectra and trace the evolution of one and the same QD over…

材料科学 · 物理学 2009-11-11 R. Seguin , A. Schliwa , T. D. Germann , S. Rodt , K. Pötschke , U. W. Pohl , D. Bimberg

A systematic study of the impact of annealing on the electronic properties of single InAs/GaAs quantum dots (QDs) is presented. Single QD cathodoluminescence spectra are recorded to trace the evolution of one and the same QD over several…

The combined effect of finite potential barriers and dielectric mismatch between dot and matrix on excitonic properties of semiconductor quantum dots has been studied. To avoid the unphysical divergence in the self-polarization energy which…

介观与纳米尺度物理 · 物理学 2007-05-23 Pablo G. Bolcatto , Cesar R. Proetto

Colloidal quantum dots (QDs) of group III-V are considered as promising candidates for next-generation environmentally friendly light emitting devices, yet there appears to be only limited understanding of the underlying electronic and…

Quantum size effects for an exciton attached to a spherical quantum dot are calculated by a variational approach. The band line-ups are assumed to be type-II with finite offsets. The dependence of the exciton binding energy upon the dot…

凝聚态物理 · 物理学 2009-10-28 U. E. H. Laheld , F. B. Pedersen , P. C. Hemmer

We present an atomistic study of the strain field, the one-particle electronic spectrum and the oscillator strength of the fundamental optical transition in chemically disordered In$_{x}$Ga$_{1-x}$As pyramidal quantum dots (QDs).…

材料科学 · 物理学 2007-05-23 R. Santoprete , P. Kratzer , M. Scheffler , R. B. Capaz , Belita Koiller

The exciton lifetimes $T_1$ in arrays of InAs/GaAs vertically coupled quantum dot pairs have been measured by time-resolved photoluminescence. A considerable reduction of $T_1$ by up to a factor of $\sim$ 2 has been observed as compared to…

介观与纳米尺度物理 · 物理学 2009-11-11 C. Bardot , M. Schwab , M. Bayer , S. Fafard , Z. Wasilewski , P. Hawrylak

We study an impact of the fine structure of the heavy--hole ground state exciton confined in semiconductor quantum dots on the photoluminescence polarization dynamics solving the relevant system of the rate equations. The presence of the…

介观与纳米尺度物理 · 物理学 2014-02-21 E. Tsitsishvili , H. Kalt

The scaling of exciton binding energy in semiconductor quantum wires is investigated theoretically through a non-variational, fully three-dimensional approach for a wide set of realistic state-of-the-art structures. We find that in the…

凝聚态物理 · 物理学 2009-10-30 F. Rossi , G. Goldoni , E. Molinari

We use an $sp^3d^5s^* $ tight-binding model to investigate the electronic and optical properties of realistic site-controlled (111)-oriented InGaAs/GaAs quantum dots. Special attention is paid to the impact of random alloy fluctuations on…

材料科学 · 物理学 2016-09-16 R. Benchamekh , S. Schulz , E. P. O'Reilly

The dynamics of exciton recombination in an ensemble of indirect band-gap (In,Al)As/AlAs quantum dots with type-I band alignment is studied. The lifetime of confined excitons which are indirect in momentum-space is mainly influenced by the…

Coulomb correlations in the optical spectra of semiconductor quantum dots are investigated using a full-diagonalization approach. The resulting multi-exciton spectra are discussed in terms of the symmetry of the involved states.…

介观与纳米尺度物理 · 物理学 2009-11-10 Norman Baer , Paul Gartner , Frank Jahnke

We investigate the homogeneous linewidth of localized type-I excitons in type-II GaAs/AlAs superlattices. These localizing centers represent the intermediate case between quasi-two-dimensional (Q2D) and quasi-zero-dimensional localizations.…

强关联电子 · 物理学 2009-11-07 Hui Zhao , Sven Wachter , Heinz Kalt

We study geometrical confinement effects in Bi$_{2}$Sr$_{2}$CaCu$_{2}$O$_{8 +\delta}$ mesoscopic vortex-matter with edge-to-surface ratio of $7-12$%. Samples have in-plane square and circular edges, 30\,$\mu$m widths, and $\sim 2\,\mu$m…

We present a phenomenological model to consider the effect of shape symmetry breaking on the optical properties of self-assembled quantum dots. We compare between quantum dots with two-fold rotational and two reflections ($C_{2v}$) symmetry…

介观与纳米尺度物理 · 物理学 2016-01-22 Y. Don , M. Zielinski , D. Gershoni

We study the effect of elastic anisotropic biaxial strain on the light emitted by neutral excitons confined in different kinds of semiconductor quantum dots (QDs). We find that the light polarization rotates by up to 80 degree and the…

介观与纳米尺度物理 · 物理学 2010-11-15 J. D. Plumhof , V. Krapek , F. Ding , K. D. Jöns , R. Hafenbrak , P. Klenovsky , A. Herklotz , K. Dörr , P. Michler , A. Rastelli , O. G. Schmidt

The effect of quantum dot shape on the hole energy spectrum and optical properties caused by the interlevel charge transition based on the 4x4 Hamiltonian has been studied for the GaAs quantum dot in the AlAs semiconductor matrix.…

介观与纳米尺度物理 · 物理学 2013-10-07 V. I. Boichuk , I. V. Bilynskyi , O. A. Sokolnyk , I. O. Shakleina

Combining the capabilities of gate defined quantum transport devices in GaAs-based heterostructures and of optically addressed self-assembled quantum dots could open broad perspectives for new devices and functionalities. For example,…