相关论文: DESTRUCTION OF THE QUANTUM HALL EFFECT WITH INCREA…
We report the observation of TEMPERATURE-INDUCED transitions between insulator, metal, and quantum-Hall behaviors for transport coefficients in the very dilute high mobility two-dimensional electron system in silicon. We consider the…
We study the behavior of the extended states of a two-dimensional electron system in silicon in a magnetic field, B. Our results show that the extended states, corresponding to the centers of different Landau levels, merge with the lowest…
The quantum Hall effect is studied numerically in modulated two-dimensional electron systems in the presence of disorder. Based on the scaling property of the Hall conductivity as well as the localization length, the critical energies where…
Magneto-transport measurements in a clean two-dimensional electron system confined to a wide GaAs quantum well reveal that, when the electrons occupy two electric subbands, the sequences of fractional quantum Hall states observed at high…
We report magneto-transport measurements in wide GaAs quantum wells with tunable density to probe the stability of the fractional quantum Hall effect at filling factor $\nu = $ 5/2 in the vicinity of the crossing between Landau levels (LLs)…
We consider Coulomb drag between two layers of two-dimensional electron gases subject to a strong magnetic field, with the Landau level filling factor in each layer being 1/2. We find $\rho_D$ to be very large, as compared to the zero…
The quantum Hall regime in a smooth random potential is considered when two disorder-broadened Zeeman levels overlap strongly. Spin-orbit coupling is found to cause a drastic change in the percolation network which leads to a strong…
We study disorder induced transition between quantum Hall states and insulator state in a {\it lattice} model. We find the positions of the extended states do not change as disorder strength is varied. As a consequence, there are direct…
In a low-disorder two-dimensional electron system, when two Landau levels of opposite spin or pseudospin cross at the Fermi level, the dominance of the exchange energy can lead to a ferromagnetic, quantum Hall ground state whose gap is…
The quantum Hall conductance of a disordered two-dimensional gas of non-interacting electrons is re-examined for its integrity against disorder in the limit of no mixing between different Landau levels. The exact one-electron eigenstates of…
We study the localization properties in the transition from a two-dimensional electron gas at zero magnetic field into an integer quantum Hall (QH) liquid. By carrying out a direct calculation of the localization length for a finite size…
We study magnetotransport in a high mobility Si two-dimensional electron system by in situ tilting of the sample relative to the magnetic field. A pronounced dip in the longitudinal resistivity is observed during the Landau level crossing…
Composite fermion metal states emerge in quantum Hall bilayers at total Landau level filling factor $\nu_T$=1 when the tunneling gap collapses by application of in-plane components of the external magnetic field. Evidence of this…
In the strong magnetic field fractional quantum Hall regime, electrons in a two-dimensional electron system are confined to their lowest Landau level. Because of the macroscopic Landau level degeneracy nearly all physical properties at low…
We report a new "dip" effect in the Hall resistance, R_{xy}, of a Si metal-oxide-semiconductor field-effect transistor in the quantum Hall effect regime. With increasing magnetic field, the Hall resistance moves from the plateau at Landau…
The ground states of electrons in two vertically coupled quantum dots in the presence of an external magnetic field have been studied within the density functional theory. A phase diagram of the transition to the quantum Hall state in…
At low Landau level filling of a two-dimensional electron system, typically associated with the formation of an electron crystal, we observe local minima in Rxx at filling factors nu=2/11, 3/17, 3/19, 2/13, 1/7, 2/15, 2/17, and 1/9. Each of…
In the absence of disorder, the degeneracy of a Landau level (LL) is $N=BA/\phi_0$, where $B$ is the magnetic field, $A$ is the area of the sample and $\phi_0=h/e$ is the magnetic flux quantum. With disorder, localized states appear at the…
We report the observation of the fractional quantum Hall effect in the lowest Landau level of a two-dimensional electron system (2DES), residing in the diluted magnetic semiconductor Cd(1-x)Mn(x)Te. The presence of magnetic impurities…
Experiments on a nearly spin degenerate two-dimensional electron system reveals unusual hysteretic and relaxational transport in the fractional quantum Hall effect regime. The transition between the spin-polarized (with fill fraction $\nu =…