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相关论文: Tunneling in the Electron Box in the Nonperturbati…

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We study strong electron tunneling in the single-electron box, a small metallic island coupled to an electrode by a tunnel junction, by means of quantum Monte Carlo simulations. We obtain results, at arbitrary tunneling strength, for the…

介观与纳米尺度物理 · 物理学 2009-10-31 Carlos P. Herrero , Gerd Schon , Andrei D. Zaikin

Quantum fluctuations of the charge in the single electron box are investigated. Based on a diagrammatic expansion we calculate the average island charge number and the effective charging energy in third order in the tunneling conductance.…

介观与纳米尺度物理 · 物理学 2009-10-31 Georg Goeppert , Hermann Grabert

We perform a numerical analysis of recently proposed scaling functions for the single electron box. Specifically, we study the ``magnetic'' susceptibility as a function of tunneling conductance and gate charge, and the effective charging…

介观与纳米尺度物理 · 物理学 2011-02-16 Sergei L. Lukyanov , Philipp Werner

Electron tunneling through small metallic islands with low capacitance is studied. The large charging energy in these systems is responsible for nonperturbative Coulomb blockade effects. We further consider the effect of electron…

凝聚态物理 · 物理学 2016-08-31 Jürgen König , Herbert Schoeller , Gerd Schön , Rosario Fazio

We study the electron transport through a system of two low-capacitance metal islands connected in series between two electrodes. The work is motivated in part by experiments on semiconducting double-dots, which show intriguing effects…

介观与纳米尺度物理 · 物理学 2009-10-31 Teemu Pohjola , Jürgen König , Herbert Schoeller , Gerd Schön

We study strong tunneling (i.e. transmission $h/e^2R_T \gg 1$) in the single-electron box with many transverse modes at zero temperature. We develop a new renormalization group method which includes all charge states and requires no initial…

介观与纳米尺度物理 · 物理学 2009-10-31 Jürgen König , Herbert Schoeller

We present numerical results on electron tunneling in a single-electron box at low temperature. The effective action of this device is equivalent to the Hamiltonian of a classical XY spin chain with long ranged interactions. Using an…

介观与纳米尺度物理 · 物理学 2007-05-23 Philipp Werner , Matthias Troyer

We report on measurements on a sample consisting of two nominally identical single-electron transistors the islands of which are coupled capacitively. One transistor at a time is operated as electron box. The remaining transistor is used as…

介观与纳米尺度物理 · 物理学 2007-05-23 R. Schaefer , B. Limbach , P. v. Stein , C. Wallisser

A peculiarity of the single-electron transistor effect makes it possible to observe this effect even in structures lacking a gate electrode altogether. The proposed method can be useful for experimental study of charging effects in…

介观与纳米尺度物理 · 物理学 2009-10-30 S. V. Vyshenski

The Coulomb energy of a small metallic island coupled to an electrode by a tunnel junction is investigated. We employ Monte Carlo simulations to determine the effective charging energy for arbitrary tunneling strength. For small tunneling…

凝聚态物理 · 物理学 2009-10-30 Xiaohui Wang , Reinhold Egger , Hermann Grabert

We discuss the suppression of Coulomb charging effects on a small metallic island coupled to an electrode by a tunnel junction. At high temperatures the quantum corrections to the classical charging energy $E_c=e^2/2C$, where $C$ is the…

凝聚态物理 · 物理学 2015-06-25 Xiaohui Wang , Hermann Grabert

The charging of a quantum box, coupled to a lead by tunneling through a single resonant level, is studied near the degeneracy points of the Coulomb blockade. Combining Wilson's numerical renormalization-group method with perturbative…

强关联电子 · 物理学 2007-05-23 Eran Lebanon , Avraham Schiller , Frithjof B. Anders

Superconductor--semiconductor hybrid systems play a crucial role in realizing nanoscale quantum devices, including hybrid qubits, Majorana bound states, and Kitaev chains. For such hybrid devices, subgap states play a prominent role in…

We study the charge of a small normal island connected by a tunnel junction to a superconducting lead. Unlike the N-I-N case, the steps of the Coulomb staircase remain sharp even if the conductance of the tunneling barrier exceeds e^2/h.…

介观与纳米尺度物理 · 物理学 2007-05-23 K. A. Matveev , L. I. Glazman

We report measurements of charge configurations and charge transfer dynamics in a hybrid single-electron box composed of aluminum and copper. We used two single-electron transistors (SETs) to simultaneously read out different parts of the…

介观与纳米尺度物理 · 物理学 2014-07-08 Chia-Heng Sun , Po-Chen Tai , Jheng-An Jiang , Cen-Shawn Wu , Jeng-Chung Chen , Yung-Fu Chen

Quantum fluctuations of the charge in the single electron box are investigated. The rounding of the Coulomb staircase caused by virtual electron tunneling is determined by perturbation theory up to third order in the tunneling conductance…

介观与纳米尺度物理 · 物理学 2009-10-31 G. Goeppert , H. Grabert , N. V. Prokof'ev , B. V. Svistunov

We have measured individual tunneling events and Coulomb step shapes in single-electron boxes with opaque superconductor-normal metal tunnel junctions. We observe anomalous broadening of the Coulomb step with decreasing temperature in a…

介观与纳米尺度物理 · 物理学 2011-06-13 O. -P. Saira , M. Mottonen , V. F. Maisi , J. P. Pekola

Tunneling is measured via the quantum levels of a metal nanoparticle. We analyze quantitatively the resonance energies, widths, and amplitudes, both in the regime where only one state is accessible for tunneling and in the non-equilibrium…

介观与纳米尺度物理 · 物理学 2009-11-07 Mandar M. Deshmukh , Edgar Bonet , A. N. Pasupathy , D. C. Ralph

Effects of the electron-electron interaction on tunneling into a metal in ultra-high magnetic field (ultra-quantum limit) are studied. The range of the interaction is found to have a decisive effect both on the nature of the field-induced…

强关联电子 · 物理学 2007-10-30 Shan-Wen Tsai , D. L. Maslov , L. I. Glazman

We study electron transport through a small metallic island in the perturbative regime. Using a diagrammatic real-time technique, we calculate the occupation of the island as well as the conductance through the transistor at arbitrary…

介观与纳米尺度物理 · 物理学 2009-10-31 Jürgen König , Herbert Schoeller , Gerd Schön
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