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相关论文: Correlation Induced Insulator to Metal Transitions

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We show that the coupling to vibrational degrees of freedom can drive a semimetal excitonic-insulator quantum phase transition in an one-dimensional two-band f-c electron system at zero temperature. The insulating state typifies an…

强关联电子 · 物理学 2015-06-17 N. V. Phan , K. W. Becker , H. Fehske

We study the two-dimensional Kane-Mele-Hubbard model at half filling by means of quantum Monte Carlo simulations. We present a refined phase boundary for the quantum spin liquid. The topological insulator at finite Hubbard interaction…

强关联电子 · 物理学 2012-03-30 M. Hohenadler , Z. Y. Meng , T. C. Lang , S. Wessel , A. Muramatsu , F. F. Assaad

The theory of the 2k_F and 4k_F instabilities in quarter-filled band organic conductors is revisited. The phase angles of the 2k_F bond and charge density waves are shown to change as electron correlation is turned on, and this switching of…

凝聚态物理 · 物理学 2009-10-22 K. C. Ung , S. Mazumdar , D. Toussaint

It is shown that recent experiments indicating a metal-insulator transition in 2D electron systems can be interpreted in terms of a simple model, in which the resistivity is controlled by scattering at charged hole traps located in the…

无序系统与神经网络 · 物理学 2009-10-31 Boris L. Altshuler , Dmitrii L. Maslov

The discovery of a metallic state and a metal-insulator transition (MIT) in two-dimensional (2D) electron systems challenges one of the most influential paradigms of modern mesoscopic physics, namely, that "there is no true metallic…

强关联电子 · 物理学 2017-04-07 S. V. Kravchenko , M. P. Sarachik

We describe a general method to study the ground state phase diagram of electronic models on chains whose extended Hubbard hamiltonian is formed by a generalized permutator plus a band-controlling term. The method, based on the appropriate…

强关联电子 · 物理学 2009-10-31 F. Dolcini , A. Montorsi

The electron correlations in narrow energy bands are examined in framework of the Hubbard model. The single-particle Green function and energy spectrum are obtained in paramagnetic state at half-filling by means of new two-pole…

强关联电子 · 物理学 2011-12-30 Leonid Didukh , Yuriy Skorenkyy

Electron correlations in the two-orbital Hubbard model at half-filling are investigated by combining dynamical mean field theory with the exact diagonalization method. We systematically study how the interplay of the intra- and inter-band…

强关联电子 · 物理学 2009-11-07 Akihisa Koga , Yoshiki Imai , Norio Kawakami

We use determinant Quantum Monte Carlo simulations and exact diagonalization to explore insulating behavior in the Hubbard model with a bimodal distribution of randomly positioned local site energies. From the temperature dependence of the…

强关联电子 · 物理学 2007-07-10 N. Paris , A. Baldwin , R. T. Scalettar

We study the electronic structure and correlations in the geometrically frustrated two dimensional checkerboard lattice. In the large U limit considered here we start from an extended Hubbard model of spinless fermions at half-filling. We…

强关联电子 · 物理学 2007-05-23 Y. Z. Zhang , Tran Minh-Tien , V. Yushankhai , P. Thalmeier

We present a theory of the metal-insulator transition in a disordered two-dimensional electron gas. A quantum critical point, separating the metallic phase which is stabilized by electronic interactions, from the insulating phase where…

无序系统与神经网络 · 物理学 2007-05-23 Alexander Punnoose , Alexander M. Finkel'stein

We study the phase diagram of a square lattice Hubbard model with a perfect vacancy superstructure. The model can be also defined on a new bipartite lattice with each building blocks consisting of a minimal square. The non-interacting model…

强关联电子 · 物理学 2013-05-29 Hua Chen , Chao Cao , Jianhui Dai

Mott-Hubbard metal-insulator transitions in $N$-fold degenerate Hubbard models are studied within the Gutzwiller approximation. For any rational filling with $x$ (integer) electrons per site it is found that metal-insulator transition…

凝聚态物理 · 物理学 2009-10-22 Jian Ping Lu

The temperature dependence of conductivity $\sigma (T)$ of a two-dimensional electron system in silicon has been studied in parallel magnetic fields B. At B=0, the system displays a metal-insulator transition at a critical electron density…

强关联电子 · 物理学 2009-11-07 Kevin Eng , X. G. Feng , Dragana Popovic , S. Washburn

Filling-control metal-insulator transition on the two-dimensional Hubbard model is investigated by using the correlator projection method, which takes into account momentum dependence of the free energy beyond the dynamical mean-field…

强关联电子 · 物理学 2007-05-23 Kota Hanasaki , Masatoshi Imada

We study the dimensional dependence of the interplay between correlation and disorder in two dimension at half filling using 2D $t-t'$ disordered Hubbard model with deterministic disorder both at zero and finite temperatures. Inclusion of…

强关联电子 · 物理学 2015-05-13 Tribikram Gupta , Sanjay Gupta

We present a model of a strongly correlated system with a non-Fermi liquid high temperature phase. Its ground state undergoes an insulator to superconductor quantum phase transition (QPT) as a function of a pairing interaction strength.…

强关联电子 · 物理学 2023-01-04 A. L. Chudnovskiy , Alex Kamenev

In the framework of mean field approach, we study topological Mott transition in a two band model of spinless fermions on a square lattice at half filling. We consider the combined effect of the on-site Coulomb repulsion and the spin-orbit…

强关联电子 · 物理学 2021-10-14 Igor N. Karnaukhov

The interplay between strong Coulomb interactions and randomness has been a long-standing problem in condensed matter physics. According to the scaling theory of localization, in two-dimensional systems of noninteracting or weakly…

强关联电子 · 物理学 2007-05-23 S. V. Kravchenko , M. P. Sarachik

We describe a new possible route to the metal-insulator transition in doped semiconductors such as Si:P or Si:B. We explore the possibility that the loss of metallic transport occurs through Mott localization of electrons into a quantum…

强关联电子 · 物理学 2012-10-15 Andrew C. Potter , Maissam Barkeshli , John McGreevy , T. Senthil