相关论文: Bias-dependent Contact Resistance in Rubrene Singl…
We have investigated the contact resistance of rubrene single-crystal field-effect transistors (FETs) with Nickel electrodes by performing scaling experiments on devices with channel length ranging from 200 nm up to 300 $\mu$m. We find that…
We have performed a comparative study of rubrene single-crystal field-effect transistors fabricated using different materials as gate insulator. For all materials, highly reproducible device characteristics are obtained. The achieved…
The gate-voltage (VG) dependence of the contact resistance (RC) in graphene field-effect transistors is characterized by the transmission line model. The RC-VG characteristics of Ag, Cu, and Au contacts display a dip around the charge…
We investigate rubrene single-crystal field-effect transistors, whose stability and reproducibility are sufficient to measure systematically the shift in threshold voltage as a function of channel length and source-drain voltage. The shift…
We study the contact resistance and the transfer characteristics of back-gated field effect transistors of mono- and bi-layer graphene. We measure specific contact resistivity of ~7kohm*um2 and ~30kohm*um2 for Ni and Ti, respectively. We…
We demonstrated an electric field controlled exchange bias (EB) effect accompanied with unipolar resistive switching behavior in the Si/SiO2/Pt/Co/NiO/Pt device. By applying certain voltages, the device displays obvious EB in…
Multiterminal measurements have typically been employed to examine electronic properties of strongly correlated electronic materials such as transition metal oxides without the influence of contact effects. In contrast, in this work we…
Contact resistances between organic semiconductors and metals can dominate the transport properties of electronic devices incorporating such materials. We report measurements of the parasitic contact resistance and the true channel…
We report a systematic study of the contact resistance present at the interface between a metal (Ti) and graphene layers of different, known thickness. By comparing devices fabricated on 11 graphene flakes we demonstrate that the contact…
We present \textit{ab initio} studies for different Ni nanocontacts and show changes in the conductance of such constrictions due to atomic rearrangements in the contact. In particular we consider a Ni particle and show that the…
We report on fabrication and characterization of the organic field effect transistors (OFETs) on the surface of single crystals of rubrene. The parylene polymer film has been used as the gate insulator. At room temperature, these OFETs…
Straightforward contact resistance extraction methods based on electrical device characteristics are described and applied here to graphene field-effect transistors from different technologies. The methods are an educated adaptation of…
Understanding of the electrical contact properties of semiconductor nanowire (NW) field effect transistors (FETs) plays a crucial role in employing semiconducting NWs as building blocks for future nanoelectronic devices and in the study of…
We present an overview of recent studies of the charge transport in the field effect transistors on the surface of single crystals of organic low-molecular-weight materials. We first discuss in detail the technological progress that has…
Our analysis of the contact formation processes undergone by Au, Ag and Cu nanojunctions, reveals that the distance at which the two closest atoms on a pair of opposing electrodes jump into contact is, on average, two times longer for Au…
Understanding how practical lithium storage capacity varies with charge-discharge rate is crucial for designing durable anode free lithium batteries. We examine the lithiation behavior of single element metal electrodes-Al (alloying), Mg…
Contact resistances between organic semiconductors and metal electrodes have been shown to play a dominant role in electronic charge injection properties of organic field-effect transistors. These effects are more prevalent in short channel…
Conductance of an Au mono atomic contact was investigated under the electrochemical potential control. The Au contact showed three different behaviors depending on the potential: 1 $G_{0}$ ($G_{0}$ = $2e^{2}/h$), 0.5 $G_{0}$ and not-well…
The conductance of a single-atom contact is sensitive to the coupling of this contact atom to the atoms in the leads. Notably for the transition metals this gives rise to a considerable spread in the observed conductance values. The mean…
Magnetoquantum oscillations of resistance as functions of the potential difference applied across the contact are studied for metallic point contacts made of $Al$ and $Be$. The amplitude of resistance oscillations in a magnetic field…