相关论文: A multiband envelope function model for quantum tr…

The semiconductor diode, which acts as an electrical rectifier and allows unidirectional electronic transports, is the key to information processing in integrated circuits. Analogously, an optical rectifier (or diode) working at specific…

We present a TCAD compatible multiscale model of phonon-assisted band-to-band tunneling (BTBT) in semiconductors, that incorporates the non-parabolic nature of complex bands within the bandgap of the material. This model is shown capture…

Despite their ubiquity in nanoscale electronic devices, the physics of tunnel barriers has not been developed to the extent necessary for the engineering of devices in the few-electron regime. This problem is of urgent interest, as this is…

We report transport measurements on a semiconductor quantum dot with a small number of confined electrons. In the Coulomb blockade regime, conduction is dominated by cotunneling processes. These can be either elastic or inelastic, depending…

The problem of resonant transport of strongly interacting electrons through a one-dimensional single-level vibrating quantum dot is being considered. In this paper, we generalize the Komnik and Gogolin model [Phys. Rev. Lett., 90, 246403,…

The tuneability and control of quantum nanostructures in two-dimensional materials offer promising perspectives for their use in future electronics. It is hence necessary to analyze quantum transport in such nanostructures. Material…

A theory of transport in the quantum Hall regime is developed for separately contacted double-layer electron systems. Inter-layer tunneling provides a channel for equilibration of the distribution functions in the two layers and influences…

The explicit expressions for a nonresonant tunneling current mediated by the bridging units of the molecular wire embedded between the metallic electrodes, are derived. The specific regimes of the charge transmission controlled by…

We consider wave packet propagation in a quantum wire with either an embedded antidot or an embedded parallel double open quantum dot under the influence of a uniform magnetic field. The magnetoconductance and the time evolution of an…

Transport through nanosystems is treated within the second order von Neumann approach. This approach bridges the gap between rate equations which neglect level broadening and cotunneling, and the transmission formalism, which is essentially…

The general theory for quantum simulation of cubic semiconductor n-MOSFETs is presented within the effective mass equation approach. The full three-dimensional transport problem is described in terms of coupled transverse subband modes…

Electron transport is theoretically investigated in a molecular device made of anthracene molecule attached to the electrodes by thiol end groups in two different configurations (para and meta, respectively). Molecular system is described…

A fourth-order Schr\"{o}dinger equation for the description of charge transport in semiconductors in the ballistic regime is proposed with the inclusion of non-parabolic effects in the dispersion relation in order to go beyond the simple…

We investigate the transport through a quantum ring, a dot and a barrier embedded in a nanowire in a homogeneous perpendicular magnetic field. To be able to treat scattering potentials of finite extent in magnetic field we use a mixed…

Periodic driving of quantum dots is analyzed as a basis for developing dynamic switching devices. We study transport through periodically modulated energy levels which are coupled to leads via tunneling coefficients. Utilizing Floquet…

We study mesoscopic resonant tunneling as well as multichannel Kondo problems by mapping them to a first-quantized quantum mechanical model of a particle moving in a multi-dimensional periodic potential with Ohmic dissipation. From a…

Due to their wide band gaps, III-N materials can exhibit behaviors ranging from the semiconductor class to the dielectric class. Through an analogy between a Metal/AlGaN/AlN/GaN diode and a MOS contact, we make use of this dual nature and…

We present a new semi-empirical model for calculating electron transport in atomic-scale devices. The model is an extension of the Extended H\"uckel method with a self-consistent Hartree potential. This potential models the effect of an…

The problem of electron transport by means of a dumbbell shaped shuttle in strong Coulomb blockade regime is solved. The electrons may be shuttled only in the cotunneling regime during the time spans when both shoulders of the shuttle…

Electronic transport through a triple quantum dot system, with only a single dot coupled directly to external leads, is considered theoretically. The model includes Coulomb correlations in the central dot, while such correlations in the two…