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相关论文: Hf defects in HfO2/Si

200 篇论文

Helical edge states of two-dimensional topological insulators show a gap in the density of states (DOS) and suppressed conductance in the presence of ordered magnetic impurities. Here we will consider the dynamical effects on the DOS and…

介观与纳米尺度物理 · 物理学 2021-11-12 Simon Wozny , Martin Leijnse , Sigurdur I. Erlingsson

We calculate the upper critical field, Hc2(T), due to the orbital pair breaking in disordered superconductors without inversion symmetry. Differences from the usual centrosymmetric case are highlighted. The linearized gap equations in…

超导电性 · 物理学 2009-11-13 K. V. Samokhin

The influence of nitrogen incorporation on the energy distribution of interface states in the (100)Si/HfO2 system and their passivation by hydrogen have been studied. The results are compared to those of nominally N-free samples. The…

材料科学 · 物理学 2014-06-26 Y. G. Fedorenko , L. Truong , V. V. Afanas'ev , A. Stesmans , Z. Zhang , S. A. Campbell

We report an ab-initio comparative study of the electric-field-gradient tensor (EFG) and structural relaxations introduced by acceptor (Cd) and donor (Ta) impurities when they replace cations in a series of binary oxides: TiO2, SnO2, and…

材料科学 · 物理学 2008-04-24 L. A. Errico , G. Fabricius , M. Renteria

The behaviors of hydrogen (H) in MAX phase material Ti3SiC2 have been investigated using first-principles method. We show that a single H atom prefers to stay 1.01 {\AA} down of the Si vacancy with solution energy of about -4.07 eV,…

材料科学 · 物理学 2013-08-06 Yi-Guo Xu , Xue-Dong Ou , Xi-Ming Rong

The room temperature ``metallic'' properties of the quasi-one-dimensional charge density wave system (TaSe4)2I differ markedly from those expected of either a Fermi or a Luttinger Liquid. We discuss evidence for the simplest possible…

强关联电子 · 物理学 2015-06-25 Nic Shannon , Robert Joynt

We use density functional theory to study intrinsic defects and oxygen related defects in indium selenide. We find that ${InSe}$ is prone to oxidation, but however not reacting with oxygen as strongly as phosphorene. The dominant intrinsic…

Impairments baseband model in-phase and quadrature-phase Imbalance (IQI) and Residual hardware impairments (RHI) are two key factors degrading the performance of wireless communication systems (WCSs), particularly when high-frequency bands…

信息论 · 计算机科学 2021-03-30 Yassine Mouchtak , Faissal El Bouanani

Despite the concerted effort of several research groups, a detailed experimental account of defect dynamics in high-quality single- and few-layer transition metal dichalcogenides remain elusive. In this paper we report an experimental study…

介观与纳米尺度物理 · 物理学 2019-07-04 Suman Sarkar , K. Lakshmi Ganapathi , Sangeneni Mohan , Aveek Bid

We develop a theory of a pseudogap state appearing near the superconductor-insulator transition in strongly disordered metals with attractive interaction. We show that such an interaction combined with the fractal nature of the single…

超导电性 · 物理学 2007-05-23 M. V. Feigel'man , L. B. Ioffe , V. E. Kravtsov , E. A. Yuzbashyan

We present a comprehensive first-principles investigation of defects in 4$H_b$-TaS$_2$. In this layered transition metal dichalcogenide, charge transfer between alternating Mott-insulating 1T and metallic 1H layers gives rise to exotic…

材料科学 · 物理学 2026-03-26 Siavash Karbasizadeh , Wooin Yang , Wonhee Ko , Haidong Zhou , An-Ping Li , Tom Berlijn , Sai Mu

A detailed understanding of charged defects in two-dimensional semiconductors is needed for the development of ultrathin electronic devices. Here, we study negatively charged acceptor impurities in monolayer WS$_2$ using a combination of…

Two-dimensional (2D) semiconducting transition metal dichalcogenides such as MoS$_2$ have attracted extensive research interests for potential applications in optoelectronics, spintronics, photovoltaics, and catalysis. To harness the…

材料科学 · 物理学 2020-07-01 Anne Marie Z. Tan , Christoph Freysoldt , Richard G. Hennig

We introduce a first-principles study to clarify the carrier-scattering property at the SiC/SiO$_2$. Interestingly, the electron transport at the conduction-band edge is significantly affected by the introduction of oxygen, even though…

材料科学 · 物理学 2017-02-01 Shigeru Iwase , Christopher James Kirkham , Tomoya Ono

We present a theory of the Anomalous Hall Effect (AHE) in ferromagnetic (Ga,Mn)As in the regime when conduction is due to phonon-assisted hopping of holes between localized states in the impurity band. We show that the microscopic origin of…

介观与纳米尺度物理 · 物理学 2009-11-10 A. A. Burkov , Leon Balents

Hyperdoped metastable sulfur atoms endow crystalline silicon with a strong sub-bandgap light absorption. In order to explore such metastable states, we develop a new high-throughput first-principles calculation method to search for all of…

材料科学 · 物理学 2016-11-17 Ke-Fan Wang , Mingguo Liu , Yaping Ma , Zhenxiang Cheng , Yuanxu Wang , Xudong Xiao

The impurity is inherently manifest in cuprate superconductors, as cation substitution or intercalation is necessary for the introduction of charge carriers, and its influence on the electronic state is at the heart of a great debate in…

超导电性 · 物理学 2022-08-22 Minghuan Zeng , Xiang Li , Yongjun Wang , Shiping Feng

We study the quasiparticle interference (QPI) patterns caused by scattering off nonmagnetic, magnetic point impurities, and edge impurities, separately, in a two dimensional helical liquid, which describes the surface states of a…

介观与纳米尺度物理 · 物理学 2013-05-29 Xiaoting Zhou , Chen Fang , Wei-Feng Tsai , Jiangping Hu

The two-gap model for superconductivity in MgB2 predicts that interband impurity scattering should be pair breaking, reducing the critical temperature. This is perhaps the only prediction of the model that has not been confirmed…

超导电性 · 物理学 2009-11-10 Steven C. Erwin , I. I. Mazin

Control of impurity concentrations in semiconducting materials is essential to device technology. Because of their intrinsic confinement, the properties of two-dimensional semiconductors such as transition metal dichalcogenides (TMDs) are…