相关论文: Electrical Characterization of PbZr0.4Ti0.6O3 Capa…

A modified model of metal-semiconductor contacts is applied to analyze the capacitance-voltage and current-voltage characteristics of metal-ferroelectric-metal structures. The ferroelectric polarization is considered as a sheet of surface…

The current-voltage (I-V) characteristics of various MgB2 films have been studied at different magnetic fields parallel to c-axis. At fields \mu0H between 0 and 5T, vortex liquid-glass transitions were found in the I-V isotherms.…

The temperature dependence of the nonlinear current-voltage ($I$-$V$) characteristics in highly underdoped La$_{2-x}$Sr$_{x}$CuO$_{4}$ ($x=0.07$ and 0.08) thick films has been studied in both zero and perpendicular magnetic fields $H$.…

We present a model for the leakage current in ferroelectric thin- film capacitors which explains two of the observed phenomena that have escaped satisfactory explanation, i.e. the occurrence of either a plateau or negative differential…

A comprehensive current-voltage (I-V) characterization is performed for three different Schottky contacts; Pt, Ni and Ti, to unintentionally doped (UID) \{beta}-(Al0.19Ga0.81)2O3 grown by molecular beam epitaxy (MBE) on \{beta}-Ga2O3 for…

Ferroelectrics have shown potential as a promising alternative material for future photovoltaic applications. Observance of high open circuit voltages in ferroelectric thin films, have generated considerable interest in the field of…

Current-voltage ($I$-$V$) characteristics of Tl$_2$Ba$_2$CaCu$_2$O$_8$ thin films in zero magnetic field are measured and analyzed with the conventional Kosterlitz-Thouless-Berezinskii (KTB) approach, dynamic scaling approach and…

We argue that giant jumps of current at finite voltages observed in disordered samples of InO, TiN and YSi manifest a bistability caused by the overheating of electrons. One of the stable states is overheated and thus low-resistive, while…

A first-principles-based scheme is developed to simulate properties of (001) PbO-terminated Pb(Zr$_{1-x}$Ti$_{x}$)O$_3$ thin films that are under stress-free and open-circuit boundary conditions. Their low-temperature spontaneous…

The electrical conductivity of PVC films prepared with a patented plasticizer of type "A" was measured with high precision automated setup, based on standard ring sell with a voltage range much less than breakdown voltage. Continual…

Current-voltage characteristics in the insulator bordering superconductivity in disordered thin films exhibit current jumps of several orders of magnitude due to the development of a thermally bistable electronic state at very low…

The ohmic conductivity of the sol-gel derived Pb1+y(Zr0.3Ti0.7)O3 thin films (with the excess lead y=0.0 to 0.4) are investigated using low frequency small signal alternate current (AC) and direct current (DC) methods. Its temperature…

YMnO3 thin films were grown on n - type Si substrate by nebulized spray pyrolysis in Metal - Ferroelectric - Semiconductor (MFS) configuration. The C-V characteristics of the film in MFS structure exhibit hysteretic behavior consistent with…

We have investigated the electrical transport properties of 8 nm thick La0.67Ca0.33MnO3 films, sputter-deposited on SrTiO3 (STO), and etched into 5 micrometer-wide bridges by Ar-ion etching. We find that even slight overetching of the film…

(Ba0.6Sr0.4)(Zr0.3Ti0.7)O3 thin films were grown on IrO2 and Pt coated Si substrates. Film on Pt electrode showed large dielectric dispersion at lower frequency and on other hand film on IrO2 showed dielectric constant almost independent…

This paper presents high-temperature ferroelectric characterization of 40~nm Al$_{1-x-y}$B$_x$Sc$_y$N (AlBScN) thin film capacitors grown by co-sputtering Al$_{0.89}$B$_{0.11}$ and Sc targets onto Pt(111)/Ti(002)/Si(100) substrates.…

Impedance spectroscopy measurements were performed in high quality Vanadium dioxide (VO2) thin films. This technique allows us investigate the resistive and capacitive contribution to the dielectric response near the metal-insulator…

Experiments in organic semiconductors (polyacenes) evidence a strong super quadratic increase of the current-voltage (I-V) characteristic at voltages in the transition region between linear (Ohmic) and quadratic (trap free…

Epitaxial 200nm BiFe$_{0.95}$Mn$_{0.05}$O$_{3}$ (BFO) film was grown by pulsed laser deposition on (111) oriented SrTiO3 substrate buffered with a 50nm thick SrRuO$_{3}$ electrode. The BFO thin film shows a rhombohedral structure and a…

To investigate leakage current density versus electric field characteristics, epitaxial EuTiO3 thin films were deposited on (001) SrTiO3 substrates by pulsed laser deposition and were post-annealed in a reducing atmosphere. This…