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相关论文: Novel Phase Between Band and Mott Insulators in Tw…

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We examine critical properties of the quarter-filled one-dimensional Hubbard model with dimerization and with the onsite and nearest-neighbor Coulomb repulsion U and V. By utilizing the bosonization method, it is shown that the system…

强关联电子 · 物理学 2009-11-07 M. Tsuchiizu , E. Orignac

The ionic Hubbard model is a paradigmatic setup for studying the competition between band and Mott insulating behavior. Within the variationally exact in infinite dimensions Gutzwiller approximation, we derive a compact analytic expression…

强关联电子 · 物理学 2025-12-13 Marcin M. Wysokiński

We study a model of a covalent band insulator with on-site Coulomb repulsion at half-filling using dynamical mean-field theory. Upon increasing the interaction strength the system undergoes a discontinuous transition from a correlated band…

强关联电子 · 物理学 2009-10-16 Michael Sentef , Jan Kunes , Philipp Werner , Arno P. Kampf

We determine the ground-state phase diagram for the 1/r-Hubbard model with repulsive nearest-neighbor interaction at half band-filling using the density-matrix renormalization group (DMRG) method. Due to the absence of Umklapp cattering,…

强关联电子 · 物理学 2023-09-12 Florian Gebhard , Kevin Bauerbach , Örs Legeza

We consider the Bose-Hubbard model on a two-leg ladder under an artificial magnetic field, and investigate the superfluid-to-Mott insulator transition in this setting. Recently, this system has been experimentally realized [M.Atala…

量子气体 · 物理学 2015-02-03 Ahmet Keleş , M. Ö. Oktel

We investigate the local moment formation in the half-filled SU($N$) Hubbard model under a staggered ionic potential. As the Hubbard $U$ increases, the charge fluctuations are suppressed and eventually frozen when $U$ is above a critical…

强关联电子 · 物理学 2022-12-14 Shan-Yue Wang , Da Wang , Qiang-Hua Wang

Ground state properties of multi-orbital Hubbard models are investigated by the auxiliary field quantum Monte Carlo method. A Monte Carlo technique generalized to the multi-orbital systems is introduced and examined in detail. The algorithm…

强关联电子 · 物理学 2009-10-31 Yukitoshi Motome , Masatoshi Imada

We investigate the infinite-dimensional two-orbital Hubbard model at arbitrary band fillings. By means of the self-energy functional approach, we discuss the stability of the metallic state in the systems with same and different bandwidths.…

强关联电子 · 物理学 2009-11-13 Kensuke Inaba , Akihisa Koga

We develop an exact generalized Bogoliubov transformation for the spin 3/2 Hubbard model with large anti-Hunds rule coupling near half filling. Since our transformation is unitary, we can thereafter employ standard approximate mean field…

强关联电子 · 物理学 2009-11-10 Stellan Ostlund , A. Karlhede , T. H. Hansson

Recently, the field of strongly correlated electrons has begun an intense search for a correlation induced topological insulating phase. An example is the quadratic band touching point which arises in a checkerboard lattice at half-filling,…

强关联电子 · 物理学 2019-03-28 I. Mandal , S. Gemsheim

We analyze the effects of the on-site Coulomb repulsion U on a band insulator using dynamical mean field theory (DMFT). We find the surprising result that the gap is suppressed to zero at a critical Uc1 and remains zero within a metallic…

强关联电子 · 物理学 2009-11-11 Arti Garg , H. R. Krishnamurthy , Mohit Randeria

We study the quantum phase transition between a band (``ionic'') insulator and a Mott-Hubbard insulator, realized at a critical value U=Uc in a bipartite Hubbard model with two inequivalent sites, whose on-site energies differ by an offset…

凝聚态物理 · 物理学 2007-05-23 N. Gidopoulos S. Sorella , E. Tosatti

The Hubbard model on the honeycomb lattice undergoes a quantum phase transition from a semimetallic to a Mott insulating phase and from a disordered to an anti-ferromagnetically phase. We show that these transitions occur simultaneously and…

强关联电子 · 物理学 2022-07-26 Johann Ostmeyer , Evan Berkowitz , Stefan Krieg , Timo A. Lähde , Thomas Luu , Carsten Urbach

Gutzwiller variational method is applied to an effective two-dimensional Hubbard model to examine the recently proposed gossamer superconductor by Laughlin. The ground state at half filled electron density is a gossamer superconductor for…

强关联电子 · 物理学 2009-11-07 F. C. Zhang

By comparing the responses to an in-plane magnetic field near the metal-insulator transition (MIT), we find that the observed MIT in Si MOSFETs can be described by the non-perturbative Mott-Hubbard scenario. Interrelations between…

强关联电子 · 物理学 2007-05-23 Ping Sun

We report the emergence or broadening of exotic magnetic metallic phases upon explicit breaking of $SU(2)$ symmetry by introduction of mass imbalance in a variant of Hubbard model, known as the ionic Hubbard model in the presence of…

强关联电子 · 物理学 2021-01-21 Anwesha Chattopadhyay

We study the Hubbard-Holstein model, which includes both the electron-electron and electron-phonon interactions characterized by $U$ and $g$, respectively, employing the dynamical mean-field theory combined with Wilson's numerical…

强关联电子 · 物理学 2009-11-10 Gun Sang Jeon , Tae-Ho Park , Jung Hoon Han , Hyun C. Lee , Han-Yong Choi

The Hubbard model in the strong-coupling regime is mainly studied by Kondo-lattice theory or 1/d expansion theory, with d the spatial dimensionality. In two dimensions and higher, the ground state within the Hilbert subspace with no order…

强关联电子 · 物理学 2007-07-03 Fusayoshi J. Ohkawa

Based on dynamical cluster approximation (DCA) quantum Monte Carlo simulations, we study the interaction-driven Mott metal-insulator transition (MIT) in the half-filled Hubbard model on the anisotropic two-dimensional triangular lattice,…

强关联电子 · 物理学 2015-04-06 Hung T. Dang , Xiao Yan Xu , Kuang-Shing Chen , Zi Yang Meng , Stefan Wessel

We study the half-filled Hubbard model on a one-parameter family of vortex-full square lattices ranging from the isotropic case to weakly coupled Hubbard dimers. The ground-state phase diagram consists of four phases: A semi-metal and a…

强关联电子 · 物理学 2014-12-01 D. Ixert , F. F. Assaad , K. P. Schmidt