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相关论文: Orbital and spin relaxation in single and coupled …

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We study the spin relaxation in a single-electron bilayer graphene quantum dot due to the spin-orbit coupling. The spin relaxation is assisted by the emission of acoustic phonons via the bond-length change and deformation potential…

介观与纳米尺度物理 · 物理学 2025-05-21 Lin Wang , Guido Burkard

We expand on previous work that treats relaxation physics of low-lying excited states in ideal, single electron, silicon quantum dots in the context of quantum computing. These states are of three types: orbital, valley, and spin. The…

介观与纳米尺度物理 · 物理学 2014-02-12 Charles Tahan , Robert Joynt

Inelastic spin relaxation and spin splitting $\epsilon_{\mathrm{s}}$ in lateral quantum dots are studied in the regime of strong in-plane magnetic field. Due to both g-factor energy dependence and spin-orbit coupling $\epsilon_{\mathrm{s}}$…

介观与纳米尺度物理 · 物理学 2007-05-23 Vladimir I. Fal'ko , B. L. Altshuler , O. Tsyplyatev

We investigate theoretically spin relaxation in heavy hole quantum dots in low external magnetic fields. We demonstrate that two-phonon processes and spin-orbit interaction are experimentally relevant and provide an explanation for the…

介观与纳米尺度物理 · 物理学 2013-05-29 Mircea Trif , Pascal Simon , Daniel Loss

We study theoretically the spin relaxation rate in quasi-one-dimensional coupled double semiconductor quantum dots. We consider InSb and GaAs-based systems in the presence of the Rashba spin-orbit interaction, which causes mixing of…

介观与纳米尺度物理 · 物理学 2009-11-11 C. L. Romano , P. I. Tamborenea , S. E. Ulloa

We have studied direct and Raman processes of the decay of electron spin states in a quantum dot via radiation of phonons corresponding to elastic twists. Universal dependence of the spin relaxation rate on the strength and direction of the…

其他凝聚态物理 · 物理学 2009-11-11 C. Calero , E. M. Chudnovsky , D. A. Garanin

We present full atomistic calculations of the spin-flip time (T$_{1}$) of electrons and holes mediated by acoustic phonons in self-assembled In$_{1-x}$Ga$_x$As/GaAs quantum dots at zero magnetic field. At low magnetic field, the first-order…

材料科学 · 物理学 2015-05-20 Hai Wei , Ming Gong , G-C Guo , Lixin He

Spin-phonon relaxation due to two-phonon processes of a spin cluster embedded in an elastic medium has been studied. For the case of uniaxial anisotropy, relaxation rates due to Raman processes and processes involving the emission of two…

统计力学 · 物理学 2008-05-05 C. Calero , E. M. Chudnovsky , D. A. Garanin

We investigate the singlet-triplet relaxation process of a two electron silicon quantum dot. In the absence of a perpendicular magnetic field, we find that spin-orbit coupling is not the main source of singlet-triplet relaxation. Relaxation…

其他凝聚态物理 · 物理学 2009-11-13 M. Prada , R. H. Blick , R. Joynt

The spin relaxation time $T_{1}$ in zinc blende GaN quantum dot is investigated for different magnetic field, well width and quantum dot diameter. The spin relaxation caused by the two most important spin relaxation mechanisms in zinc…

材料科学 · 物理学 2009-04-11 M. Q. Weng , Y. Y. Wang , M. W. Wu

We consider spin-lattice relaxation processes for electrons trapped in lateral Si quantum dots in a $[001]$ inversion layer. Such dots are characterized by strong confinement in the direction perpendicular to the surface and much weaker…

材料科学 · 物理学 2009-11-07 B. A. Glavin , K. W. Kim

Spin relaxation is investigated theoretically in two-dimensional systems. Various semiconductor structures of both n- and p-types are studied in detail. The most important spin relaxation mechanisms are considered. The spin relaxation times…

介观与纳米尺度物理 · 物理学 2009-11-07 N. S. Averkiev , L. E. Golub , M. Willander

Spin-orbit mediated phonon relaxation in a two-dimensional quantum dot is investigated using different confining potentials. Elliptical harmonic oscillator and cylindrical well results are compared to each other in the case of a…

介观与纳米尺度物理 · 物理学 2017-10-25 C. J. Wesslén , E Lindroth

We demonstrate electrical control of the spin relaxation time T_1 between Zeeman split spin states of a single electron in a lateral quantum dot. We find that relaxation is mediated by the spin-orbit interaction, and by manipulating the…

介观与纳米尺度物理 · 物理学 2010-09-28 S. Amasha , K. MacLean , Iuliana P. Radu , D. M. Zumbuhl , M. A. Kastner , M. P. Hanson , A. C. Gossard

In this paper, a detailed analysis of anisotropic effects on the phonon induced spin relaxation rate in III-V semiconductor quantum dots (QDs) is carried out. We show that the accidental degeneracy due to level crossing between the first…

介观与纳米尺度物理 · 物理学 2012-01-27 Sanjay Prabhakar , Shohini Ghose , Roderick Melnik , Luis L. Bonilla

Non-charge based logic in single-hole spin of semiconductor quantum dots (QDs) can be controlled by anisotropic gate potentials providing a notion for making next generation solid-state quantum devices. In this study, we investigate the…

介观与纳米尺度物理 · 物理学 2024-07-16 Dalton Forbes , Sanjay Prabhakar , Ruma De , Himadri S. Chakraborty , Roderick Melnik

We study theoretically the phonon-induced relaxation and decoherence of spin states of two electrons in a lateral double quantum dot in a SiGe/Si/SiGe heterostructure. We consider two types of singlet-triplet spin qubits and calculate their…

介观与纳米尺度物理 · 物理学 2018-05-29 Viktoriia Kornich , Christoph Kloeffel , Daniel Loss

The spin relaxation in a 1D InAs quantum dot with the Rashba spin-orbit coupling under driving THz magnetic fields is investigated by developing the kinetic equation with the help of the Floquet-Markov theory, which is generalized to the…

材料科学 · 物理学 2007-05-23 J. H. Jiang , M. W. Wu

Understanding and control of the spin relaxation time $T_1$ is among the key challenges for spin based qubits. A larger $T_1$ is generally favored, setting the fundamental upper limit to the qubit coherence and spin readout fidelity. In…

介观与纳米尺度物理 · 物理学 2018-08-29 Leon C. Camenzind , Liuqi Yu , Peter Stano , Jeramy Zimmerman , Arthur C. Gossard , Daniel Loss , Dominik M. Zumbühl

We study theoretically spin relaxation during phonon-assisted tunneling of a single electron in self-assembled InAs/GaAs quantum-dot molecules formed by vertically stacked dots. We find that the spin-flip tunneling rate may be as high as 1%…

介观与纳米尺度物理 · 物理学 2021-06-23 Michał Gawełczyk , Krzysztof Gawarecki