Spin Relaxation Anisotropy in Two-Dimensional Semiconductor Systems
介观与纳米尺度物理
2009-11-07 v1 无序系统与神经网络
摘要
Spin relaxation is investigated theoretically in two-dimensional systems. Various semiconductor structures of both n- and p-types are studied in detail. The most important spin relaxation mechanisms are considered. The spin relaxation times are calculated taking into account the contributions to the spin--orbit interaction due to both the bulk inversion asymmetry and the structure inversion asymmetry. It is shown that in-plane anisotropy of electron spin relaxation appears in III--V asymmetrical heterostructures. This anisotropy may be controlled by external parameters, and the spin relaxation times differ by several orders of magnitude.
引用
@article{arxiv.cond-mat/0202437,
title = {Spin Relaxation Anisotropy in Two-Dimensional Semiconductor Systems},
author = {N. S. Averkiev and L. E. Golub and M. Willander},
journal= {arXiv preprint arXiv:cond-mat/0202437},
year = {2009}
}
备注
11 pages, no figures, Topical Review for J. Phys. Cond. Matter (in press)