相关论文: Realistic heterointerfaces model for excitonic sta…
By a cleaved-edge overgrowth method with molecular beam epitaxy and a (110) growth-interrupt-anneal, we have fabricated a GaAs quantum well exactly 30 monolayers thick bounded by atomically smooth AlGaAs hetero-interfaces without atomic…
Resonance dielectric response of excitons is studied for the high-quality GaAs/InGaAs heterostructures with wide asymmetric quantum wells (QWs). To highlight effects of the QW asymmetry, we have grown and studied several heterostructures…
Characteristics of GaAs/In$_{x}$Ga$_{1-x}$As/GaAs heterostructures with a single quantum well, which were obtained at various growth parameters, are evaluated according to the results of measurements of low-temperature photoluminescence…
A theory of polaritonic states is developed for a nanostructure with a wide quantum well stressed perpendicular to the growth axis of the heterostructure. The role of the $K$-linear terms appearing in the exciton Hamiltonian under the…
We introduced an elevated trap technique and exploited it for lowering the effective temperature of indirect excitons. We observed narrow photoluminescence lines which correspond to the emission of individual states of indirect excitons in…
The theory of the linear optical response of excitons in quantum wells and polaritons in planar semiconductor microcavities is reviewed, in the light of the existing experiments. For quantum well excitons, it is shown that disorder mainly…
Dark excitons are of fundamental importance in a broad range of contexts, but are difficult to study using conventional optical spectroscopy due to their weak interaction with light. We show how coherent multidimensional spectroscopy can…
Periodical spatial modulation of the excitonic resonance in a quantum well could lead to the formation of a new highly directional and resonant coherent optical response -- resonant diffraction. Such excitonic diffraction gratings were…
Variations in the width of a quantum well (QW) are known to be a source of broadening of the exciton line. Using low temperature near-field optical microscopy, we have exploited the dependence of exciton energy on well-width to show that in…
The binding energy and the corresponding wave function of excitons in GaAs-based finite square quantum wells (QWs) are calculated by the direct numerical solution of the three-dimensional Schroedinger equation. The precise results for the…
Combining the capabilities of gate defined quantum transport devices in GaAs-based heterostructures and of optically addressed self-assembled quantum dots could open broad perspectives for new devices and functionalities. For example,…
The effect of an external electric field F on the excitonic photoluminescence (PL) spectra of a symmetric coupled double quantum well (DQW) is investigated both theoretically and experimentally. We show that the variational method in a…
A model for diffusion of statistically-degenerate excitons in (coupled) quantum wells is proposed and analysed. Within a microscopic approach, we derive a quantum diffusion equation, calculate and estimate the self-diffusion coefficient for…
A microscopic model of a heterostructure with a quantum well (QW) is proposed to study the exciton behavior in an external electric field. The effect of an electric field ranging from 0 to 6 kV/cm applied to the GaAs/AlGaAs QW structure in…
The effect of irradiation by 30-keV Ga+ and 35-keV He+ ions (in relatively small doses) on the excitonic reflectivity spectra of single InGaAs/GaAs quantum-well structures is studied. It is found that the irradiation results in decreasing…
The optical properties of excitons confined in initially-unstrained GaAs/AlGaAs quantum dots are studied as a function of a variable quasi-uniaxial stress. To allow the validation of state-of-the-art computational tools for describing the…
Exciton excited states in the quantum well are studied via their effect on the nonradiative broadening of the ground exciton resonance. Dependence of the nonradiative broadening of the ground exciton state on the photon energy of additional…
We report the first terahertz study of the intra-excitonic 1s-2p transition at high excitation densities in GaAs/AlGaAs quantum wells. A strong shift, broadening, and ultimately the disappearance of this resonance occurs with increasing…
Photoluminescence (PL) and reflectivity spectra of a high-quality InGaAs/GaAs quantum well structure reveal a series of ultra-narrow peaks attributed to the quantum confined exciton states. The intensity of these peaks decreases as a…
Spatially indirect excitons in semiconductor quantum wells are relevant to basic research and device applications because they exhibit enhanced tunability, delocalized wave functions, and potentially longer lifetimes relative to direct…