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相关论文: Breakup of the Fermi surface near the Mott transit…

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The evolution from an anomalous metallic phase to a Mott insulator within the two-dimensional Hubbard model is investigated by means of the Cellular Dynamical Mean-Field Theory. We show that the density-driven Mott metal-insulator…

强关联电子 · 物理学 2007-08-15 M. Civelli , M. Capone , S. S. Kancharla , O. Parcollet , G. Kotliar

The underlying Fermi surface is a key concept for strongly-interacting electron models and has been introduced to generalize the usual notion of the Fermi surface to generic (superconducting or insulating) systems. By using improved…

强关联电子 · 物理学 2013-05-30 Luca F. Tocchio , Federico Becca , Claudius Gros

We present a theoretical approach to describing the Mott transition of electrons on a two dimensional lattice that begins with the low energy effective theory of the Fermi liquid. The approach to the Mott transition must be characterized by…

强关联电子 · 物理学 2012-01-25 David F. Mross , T. Senthil

We investigate a system of one dimensional Hubbard chains of interacting fermions coupled by inter-chain hopping. Using a generalization of the Dynamical Mean Field Theory we study the deconfinement transition from a Mott insulator to a…

强关联电子 · 物理学 2009-11-07 S. Biermann , A. Georges , A. Lichtenstein , T. Giamarchi

For continuous Mott metal-insulator transitions in layered two dimensional systems, we demonstrate the phenomenon of dimensional decoupling: the system behaves as a three-dimensional metal in the Fermi liquid side but as a stack of…

强关联电子 · 物理学 2016-09-08 Liujun Zou , T. Senthil

We study theoretically the zero temperature phase transition in two dimensions from a Fermi liquid to a paramagnetic Mott insulator with a spinon Fermi surface. We show that the approach to the bandwidth controlled Mott transition from the…

强关联电子 · 物理学 2009-11-13 T. Senthil

I show that the quantum critical points observed in heavy fermions (the `Kondo breakdown') and in doped cuprates can be understood in terms of concealed Mott criticality. In this picture, one species of electrons undergoes a Mott…

强关联电子 · 物理学 2025-10-03 Louk Rademaker

We study the Mott transition in a frustrated Hubbard model with next-nearest neighbor hopping at half-filling. The interplay between interaction, dimensionality and geometric frustration closes the one-dimensional Mott gap and gives rise to…

强关联电子 · 物理学 2012-09-19 Marcin Raczkowski , Fakher F. Assaad

One of the early triumphs of quantum physics is the explanation why some materials are metallic whereas others are insulating. While a treatment based on single electron states correctly predicts the character of most materials this…

强关联电子 · 物理学 2015-09-02 S. Friedemann , H. Chang , M. B. Gamża , P. Reiss , X. Chen , P. Alireza , W. A. Coniglio , D. Graf , S. Tozer , F. M. Grosche

Insulator-to-metal transition in Ca$_{2}$RuO$_{4}$ has drawn keen attention because of its sensitivity to various stimulation and its potential controllability. Here, we report a direct observation of Fermi surface, which emerges upon…

The correlation-driven Mott transition is commonly characterized by a drop in resistivity across the insulator-metal phase boundary; yet, the complex permittivity provides a deeper insight into the microscopic nature. We investigate the…

We study evolution of metals from Mott insulators in the carrier-doped 2D Hubbard model using a cluster extension of the dynamical mean-field theory. While the conventional metal is simply characterized by the Fermi surface (pole of the…

强关联电子 · 物理学 2009-11-13 Shiro Sakai , Yukitoshi Motome , Masatoshi Imada

We calculate the superfluid transition temperature for a two-component 3D Fermi gas in a 1D tight optical lattice and discuss a dimensional crossover from the 3D to quasi-2D regime. For the geometry of finite size discs in the 1D lattice,…

超导电性 · 物理学 2009-11-11 G. Orso , G. V. Shlyapnikov

The Mott metal-insulator transition-a drastic manifestations of Coulomb interactions among electrons-is the first-order transition of clear discontinuity, as shown by various experiments and the celebrated dynamical mean-field theory.…

强关联电子 · 物理学 2018-03-01 Tetsuya Furukawa , Kazuhiko Kobashi , Yosuke Kurosaki , Kazuya Miyagawa , Kazushi Kanoda

We have performed angle-resolved photoemission spectroscopy on epitaxial VTe2 films to elucidate the relationship between the fermiology and charge-density waves (CDW). We found that a two-dimensional triangular pocket in 1 monolayer (ML)…

材料科学 · 物理学 2021-08-04 T. Kawakami , K. Sugawara , T. Kato , T. Taguchi , S. Souma , T. Takahashi , T. Sato

The metal-insulator transition in one dimensional fermionic systems with long-range interaction is investigated. We have focused on an excitation spectrum by the exact diagonalization technique in sectors with different momentum quantum…

强关联电子 · 物理学 2009-10-30 Yasuhiro Hatsugai

We study the Mott transition of a mixed Bose-Fermi system of ultracold atoms in an optical lattice, where the number of (spinless) fermions and bosons adds up to one atom per lattice, n_F+n_B=1. For weak interactions, a Fermi surface…

量子气体 · 物理学 2013-05-30 Ehud Altman , Eugene Demler , Achim Rosch

Unusual metallic states involving breakdown of the standard Fermi-liquid picture of long-lived quasiparticles in well-defined band states emerge at low temperatures near correlation-driven Mott transitions. Prominent examples are…

材料科学 · 物理学 2018-11-14 L. Craco , M. S. Laad , S. Leoni

We use the two-step density-matrix renormalization group method to elucidate the long-standing issue of the universality class of the Mott transition in the Hubbard model in two dimensions. We studied a spatially anisotropic two-dimensional…

强关联电子 · 物理学 2015-06-05 S. Moukouri , Eitan Eidelstein

The phenomenon of Mott insulation involves the localization of itinerant electrons due to strong local repulsion. Upon doping, a pseudogap (PG) phase emerges - marked by selective gapping of the Fermi surface without conventional symmetry…

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