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相关论文: Electrical contacts to nanotubes and nanowires: wh…

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Metal-semiconductor contacts play a key role in electronics. Here we show that for quasi-one dimensional (Q1D) structures such as nanotubes and nanowires, side contact with the metal only leads to weak band realignment, in contrast with…

材料科学 · 物理学 2009-11-11 F. Leonard , A. A. Talin

At semiconductor-metal junctions, the Schottky barrier height is generally fixed by "Fermi-level pinning". We find that when a semiconducting carbon nanotube is end-contacted to a metal (the optinal geometry for nanodevices), the behavior…

凝聚态物理 · 物理学 2009-10-31 Francois Leonard , J. Tersoff

For semimetal nanowires with diameters smaller than a few tens of nanometers, a semimetal-to-semiconductor transition is observed as the emergence of an energy band gap resulting from quantum confinement. Quantum confinement in a semimetal…

介观与纳米尺度物理 · 物理学 2016-12-02 Alfonso Sanchez-Soares , James C. Greer

Rhodium (Rh) is found similar to Palladium (Pd) in making near-ohmic electrical contacts to single-walled carbon nanotubes (SWNTs) with diameters d > ~ 1.6 nm. Non-negligible positive Schottky barriers (SBs) exist between Rh or Pd and…

介观与纳米尺度物理 · 物理学 2015-06-25 Woong Kim , Ali Javey , Ryan Tu , Jien Cao , Qian Wang , Hongjie Dai

We present an atomistic self-consistent tight-binding study of the electronic and transport properties of metal-semiconducting carbon nanotube interfaces as a function of the nanotube channel length when the end of the nanotube wire is…

介观与纳米尺度物理 · 物理学 2009-11-10 Yongqiang Xue , Mark A. Ratner

The observed performances of carbon nanotube field effect transistors are examined using first-principles quantum transport calculations. We focus on the nature and role of the electrical contact of Au and Pd electrodes to open-ended…

介观与纳米尺度物理 · 物理学 2009-11-13 J. J. Palacios , P. Tarakeshwar , Dae M. Kim

Electronic properties of metal-finite semiconducting carbon nanotube interfaces are studied as a function of the nanotube length using a self-consistent tight-binding theory. We find that the shape of the potential barrier depends on the…

介观与纳米尺度物理 · 物理学 2009-11-10 Yongqiang Xue , Mark A. Ratner

The modeling of carbon nanotube-metal contacts is important from both basic and applied view points. For many applications, it is important to design contacts such that the transmission is dictated by intrinsic properties of the nanotube…

材料科学 · 物理学 2009-10-31 M. P. Anantram , S. Datta , Yongxiang Xue

Superconducting properties of metallic nanowires can be entirely different from those of bulk superconductors because of the dominating role played by thermal and quantum fluctuations of the order parameter. For superconducting wires with…

超导电性 · 物理学 2009-12-16 K. Yu. Arutyunov , D. S. Golubev , A. D. Zaikin

The problem of Fermi-level pinning at semiconductor-metal contacts is readdressed starting from first-principles calculations for Al/GaAs. We give quantitative evidence that the Schottky barrier height is very little affected by any…

材料科学 · 物理学 2009-10-30 Alice Ruini , Raffaele Resta , Stefano Baroni

The fundamental question of how chirality affects the electronic coupling of a nanotube to metal contacts is important for the application of nanotubes as nanowires. We show that metallic-zigzag nanotubes are superior to armchair nanotubes…

介观与纳米尺度物理 · 物理学 2009-11-07 M. P. Anantram

As the dimensions of electronic devices approach those of molecules, the size, geometry and chemical composition of the contact electrodes play increasingly dominant roles in device functions. It is shown here that single-walled carbon…

材料科学 · 物理学 2007-05-23 Pengfei Qi , Ali Javey , Marco Rolandi , Qian Wang , Erhan Yenilmez , Hongjie Dai

Electronic structure properties of nanowires (NW) with diameters of 1.5 nm and 3 nm based on semimetallic $\alpha$-Sn are investigated by employing density functional theory and perturbative $GW$ methods. We explore the dependence of…

材料科学 · 物理学 2017-01-04 Alfonso Sanchez-Soares , Conor O'Donnell , James C. Greer

We present a scaling analysis of electronic and transport properties of metal-semiconducting carbon nanotube interfaces as a function of the nanotube length within the coherent transport regime, which takes fully into account atomic-scale…

介观与纳米尺度物理 · 物理学 2009-11-10 Yongqiang Xue , Mark A. Ratner

Recent experiment has uncovered semimetal bismuth (Bi) as an excellent electrical contact to monolayer MoS$_2$ with ultralow contact resistance. The contact physics of the broader semimetal/monolayer-semiconductor family beyond Bi/MoS$_2$,…

材料科学 · 物理学 2023-04-19 Tong Su , Yueyan Li , Qianqian Wang , Weiwei Zhao , Liemao Cao , Yee Sin Ang

Angular perturbations modify the band structure of armchair (and other metallic) carbon nanotubes by breaking the tube symmetry and may induce a metal-semiconductor transition when certain selection rules are satisfied. The symmetry…

介观与纳米尺度物理 · 物理学 2021-07-02 Yan Li , Slava V. Rotkin , Umberto Ravaioli

We report a numerical study of the tunnel conductance through the Schottky barrier at the contact between a semiconducting carbon nanotube and a metal electrode. In a planar gate model the asymmetry between the p--doped and the n--doped…

介观与纳米尺度物理 · 物理学 2009-09-10 Takeshi Nakanishi , Adrian Bachtold , Cees Dekker

We investigate electronic properties of heterojunctions between metallic and semiconducting single-wall carbon nanotubes. Ineffective screening of the long range Coulomb interaction in one-dimensional nanotube systems drastically modifies…

介观与纳米尺度物理 · 物理学 2009-10-31 Arkadi A. Odintsov

Disorder effects on the density of states and electronic conduction in metallic carbon nanotubes are analyzed by a tight binding model with Gaussian bond disorder. Metallic armchair and zigzag nanotubes are considered. We obtain a…

凝聚态物理 · 物理学 2015-06-25 K. Harigaya

We use numerical simulations to investigate the properties of metal contacts to three-dimensional arrays of carbon nanotubes (CNTs). For undoped arrays top-contacted with high or low work function metals, electrostatic screening is very…

介观与纳米尺度物理 · 物理学 2014-03-18 Aron W. Cummings , Julien Varennes , François Léonard
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