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相关论文: Surface currents and slope selection in crystal gr…

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A solid-on-solid model of epitaxial growth in 1+1 dimensions is investigated in which slope dependent upward and downward particle currents compete on the surface. The microscopic mechanisms which give rise to these currents are the…

统计力学 · 物理学 2009-11-07 M. Biehl , M. Ahr , M. Kinne , W. Kinzel , S. Schinzer

We study the effect of crystal symmetry and step-edge diffusion on the surface current governing the evolution of a growing crystal surface. We find there are two possible contributions to anisotropic currents, which both lead to the…

材料科学 · 物理学 2007-05-23 Paolo Politi , Joachim Krug

The growth of a crystal is usually determined by its surface. Many factors influence the growth dynamics. Energy barriers associated with the presence of steps most often decide about the emerging pattern. The height and type of…

材料科学 · 物理学 2023-12-08 Marta Anna Chabowska , Magdalena A. Załuska-Kotur

We examine the step dynamics in a 1+1 dimensional model of epitaxial growth based on the BCF-theory. The model takes analytically into account the diffusion of adatoms, an incorporation mechanism and an Ehrlich-Schwoebel barrier at step…

统计力学 · 物理学 2009-10-31 S. Schinzer , S. Köhler , G. Reents

We studied the step dynamics during crystal sublimation and growth in the limit of fast surface diffusion and slow kinetics of atom attachment-detachment at the steps. For this limit we formulate a model free of the quasi-static…

化学物理 · 物理学 2009-11-13 Bogdan Ranguelov , Stoyan Stoyanov

We study conserved models of crystal growth in one dimension [$\partial_t z(x,t) =-\partial_x j(x,t)$] which are linearly unstable and develop a mound structure whose typical size L increases in time ($L = t^n$). If the local slope ($m…

统计力学 · 物理学 2007-05-23 Paolo Politi , Alessandro Torcini

The role of step edge diffusion (SED) in epitaxial growth is investigated. To this end we revisit and extend a recently introduced simple cubic solid-on-solid model, which exhibits the formation and coarsening of pyramid or mound like…

统计力学 · 物理学 2009-10-31 S. Schinzer , M. Kinne , M. Biehl , W. Kinzel

We consider the growth of a vicinal crystal surface in the presence of a step-edge barrier. For any value of the barrier strength, measured by the length l_es, nucleation of islands on terraces is always able to destroy asymptotically…

统计力学 · 物理学 2007-05-23 Daniele Vilone , Claudio Castellano , Paolo Politi

We study the onset and development of ledge instabilities during growth of vicinal metal surfaces using kinetic Monte Carlo simulations. We observe the formation of periodic patterns at [110] close packed step edges on surfaces vicinal to…

凝聚态物理 · 物理学 2009-11-07 M. Rusanen , I. T. Koponen , J. Heinonen , T. Ala-Nissila

We investigate quasi one-dimensional atomic chains on Si(553)-Au with a scanning tunneling microscope (STM). The observed periodicity at the Si step edge can be altered by the STM and depends on the magnitude of the tunneling current. In a…

材料科学 · 物理学 2014-05-21 S. Polei , P. C. Snijders , K. -H. Meiwes Broer , I. Barke

As was shown in an earlier paper [1], solids dispersed in a drying drop migrate to the (pinned) contact line. This migration is caused by outward flows driven by the loss of the solvent due to evaporation and by geometrical constraint that…

软凝聚态物质 · 物理学 2007-05-23 Yuri O. Popov , Thomas A. Witten

Epitaxial growth on a surface vicinal to a high-symmetry crystallographic plane occurs through the propagation of atomic steps, a process called step-flow growth. In some instances, the steps tend to form close groups (or bunches), a…

材料科学 · 物理学 2021-08-25 L. Guin , M. E. Jabbour , N. Triantafyllidis

Computer simulations and scaling theory are used to investigate the damping of oscillations during epitaxial growth on high-symmetry surfaces. The crossover from smooth to rough growth takes place after the deposition of (D/F)^\delta…

统计力学 · 物理学 2007-05-23 H. Kallabis , L. Brendel , P. Smilauer , J. Krug , D. E. Wolf

The electro-hydrodynamics near conducting walls is revisited. Attention is focused on the impact of an explicit diffuse Stern layer, which permittivity and viscosity differ from the bulk values, on the velocity of an electro-osmotic plug…

流体动力学 · 物理学 2025-08-12 Evgeny S. Asmolov , Elena F. Silkina , Olga I. Vinogradova

The dynamic effects, such as the steering and the screening effects during deposition, on an epitaxial growth (Cu/Cu(001)), is studied by kinetic Monte Carlo simulation that incorporates molecular dynamic simulation to rigorously take the…

材料科学 · 物理学 2016-08-31 Jikeun Seo , Hye-Young Kim , J. -S. Kim

The (1+1)-dimensional kinetic model of crystal growth with simulated self-attraction and random sequential or parallel dynamics is introduced and studied via Monte-Carlo simulations. To imitate the attraction of absorbing atoms the…

统计力学 · 物理学 2008-11-27 P. N. Timonin

We report the results of computer simulations of epitaxial growth in the presence of a large Schwoebel barrier on different crystal surfaces: simple cubic(001), bcc(001), simple hexagonal(001) and hcp(001). We find, that mounds coarse by a…

统计力学 · 物理学 2009-10-31 M. Ahr , M. Biehl , M. Kinne , W. Kinzel

Networks of steps, seen in STM observations of vicinal surfaces on Au and Pt (110), are analyzed. A simple model is introduced for the calculation of the free energy of the networks as function of the slope parameters, valid at low step…

统计力学 · 物理学 2008-02-03 Henk van Beijeren , Enrico Carlon

Motivated by biological aspects related to fungus growth, we consider the competition of growth and corrosion. We study a modification of the totally asymmetric exclusion process, including the probabilities of injection $\alpha$ and death…

统计力学 · 物理学 2015-05-14 Sven Dorosz , Sayak Mukherjee , Thierry Platini

Transport current distribution in clean 2$H$-NbSe$_{2}$ crystals is studied by measuring the self-induced magnetic field across the sample. Below $T_c$ most of the current flows at the edges of the crystals due to strong surface barriers,…

超导电性 · 物理学 2009-10-31 Y. Paltiel , D. T. Fuchs , E. Zeldov , Y. N. Myasoedov , H. Shtrikman , E. Y. Andrei
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